Product Information

VS-175BGQ030

VS-175BGQ030 electronic component of Vishay

Datasheet
Vishay Semiconductors Schottky Diodes & Rectifiers 175 Amp 30 Volt 7400 Amp IFSM

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.9766 ea
Line Total: USD 6.98

630 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
630 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 6.762
10 : USD 5.681
100 : USD 4.6
250 : USD 4.347
375 : USD 4.071
1125 : USD 3.4845
2625 : USD 3.289
5250 : USD 3.151
10125 : USD 3.0705

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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VS-175BGQ030 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 175 A FEATURES 150 C max. operating junction temperature High frequency operation Cathode Anode Ultralow forward voltage drop Continuous high current operation Guard ring for enhanced ruggedness and long term reliability Screw mounting only PowerTab Designed and qualified according to JEDEC -JESD 47 PowerTab package PRODUCT SUMMARY Material categorization: for definitions of compliance Package PowerTab please see www.vishay.com/doc 99912 I 175 A F(AV) DESCRIPTION V 30 V R The VS-175BGQ030 Schottky rectifier has been optimized V at I 0.52 V F F for ultralow forward voltage drop specifically for low voltage I 650 mA at 125 C output in high current AC/DC power supplies. RM The proprietary barrier technology allows for reliable T max. 125 C J operation up to 150 C junction temperature. Typical Diode variation Single die applications are in switching power supplies, converters, E 80 mJ AS reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS Rectangular waveform 175 A I F(AV) T 112 C C V 30 V RRM I t = 5 s sine 7400 A FSM p 175 A (typical) 0.47 V pk V F T 150 C J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-175BGQ030 UNITS Maximum DC reverse voltage V R 30 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 112 C, rectangular waveform 175 A F(AV) C Following any rated load 5 s sine or 3 s rect. pulse 7400 Maximum peak one cycle I condition and with rated A FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 1400 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 12 A, L = 1.12 mH 80 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 12 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 16-Jun-15 Document Number: 94583 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-175BGQ030 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS 100 A 0.47 0.49 T = 25 C J 175 A 0.55 0.59 (1) Forward voltage drop V V FM 100 A 0.36 0.39 T = 150 C J 175 A 0.47 0.52 T = 125 C, V = 15 V 160 220 J R T = 150 C, V = 30 V 1400 2000 J R (1) Reverse leakage current I mA RM T = 25 C 1.3 4.5 J V = Rated V R R T = 125 C 450 650 J Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 8500 pF T R DC Typical series inductance L Measured from tab to mounting plane 3.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.25 thJC junction to case C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.20 thCS case to heatsink 5g Approximate weight 0.18 oz. minimum 1.2 (10) N m Mounting torque (lbf in) maximum 2.4 (20) Marking device Case style PowerTab 175BGQ045 1000 10 000 1000 150 C 125 C 100 100 T = 150 C 100 C J 75 C 10 50 C 10 1 25 C T = 125 C J 0.1 T = 25 C J 1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 16-Jun-15 Document Number: 94583 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (mA) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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