Product Information

VS-20L15TSTRLPBF

VS-20L15TSTRLPBF electronic component of Vishay

Datasheet
Vishay Semiconductors Schottky Diodes & Rectifiers 20 Amp 15 Volt

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 2.7027
10 : USD 2.2453
100 : USD 1.8503
250 : USD 1.7949
500 : USD 1.6008
800 : USD 1.4721
2400 : USD 1.4721
4800 : USD 1.4497
9600 : USD 1.4047
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Height
Length
Operating Temperature Range
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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VS-20L15TSPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 20 A FEATURES 125 C T operation (V < 5 V) J R Base cathode Single diode configuration 2 Optimized for OR-ing applications Ultralow forward voltage drop Guard ring for enhanced ruggedness and long term reliability 2 1 3 TO-263AB (D PAK) High purity, high temperature epoxy N/C Anode encapsulation for enhanced mechanical strength and moisture resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY AEC-Q101 qualified I 20 A F(AV) Material categorization: for definitions of compliance V 15 V R please see www.vishay.com/doc 99912 V at I 0.33 V F F DESCRIPTION I max. 600 mA at 100 C RM T max. 125 C The Schottky rectifier module has been optimized for ultra J low forward voltage drop specifically for the OR-ing of E 10 mJ AS parallel power supplies. The proprietary barrier technology 2 Package TO-263AB (D PAK) allows for reliable operation up to 125 C junction Diode variation Single die temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 20 A F(AV) V 15 V RRM I t = 5 s sine 700 A FSM p V 19 A , T = 125 C (typical) 0.25 V F pk J T Range -55 to +125 C J VOLTAGE RATINGS PARAMETER SYMBOLTEST CONDITIONSVS-20L15TSPbFUNITS Maximum DC reverse voltage V R T = 100 C 15 V J Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 85 C, rectangular waveform 20 F(AV) C See fig. 5 A 5 s sine or 3 s rect. pulse 700 Maximum peak one cycle non-repetitive Following any rated load surge current I condition and with rated FSM See fig. 7 10 ms sine or 6 ms rect. pulse V applied 330 RRM Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 6 mH 10 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 24-Jul-14 Document Number: 94166 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-20L15TSPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS 19 A -0.41 T = 25 C J 40 A - 0.52 Forward voltage drop (1) V V FM See fig. 1 19 A 0.25 0.33 T = 125 C J 40 A 0.37 0.50 T = 25 C -10 J Reverse leakage current (1) I V = Rated V mA RM R R See fig. 2 T = 100 C - 600 J Threshold voltage V 0.182 V F(TO) T = T maximum J J Forward slope resistance r 7.6 m t Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C - 2000 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8 - nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction T -55 to +125 J temperature range C Maximum storage T -55 to +150 Stg temperature range Maximum thermal resistance, DC operation R 1.5 thJC junction to case See fig. 4 Typical thermal resistance, Mounting surface, smooth and greased R 0.50 C/W thCS case to heatsink (For TO-220) Maximum thermal resistance, R DC operation 40 thJA junction to ambient 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) 2 Marking device Case style D PAK 20L15TS Revision: 24-Jul-14 Document Number: 94166 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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