333 3 VS-2EFH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 A FRED Pt FEATURES Hyperfast recovery time, reduced Q , and soft eSMP Series rr recovery 175 C maximum operating junction temperature Specified for output and snubber operation Low forward voltage drop Low leakage current Top view Bottom view Meets MSL level 1, per J-STD-020, LF maximum peak SMF (DO-219AB) of 260 C Meets JESD 201 class 2 whisker test Cathode Anode Wave and reflow solderable Compatible to SOD-123W package case outline LINKS TO ADDITIONAL RESOURCES Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3D Models DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery. PRIMARY CHARACTERISTICS I 2 A The planar structure and the platinum doped life time control F(AV) guarantee the best overall performance, ruggedness, and V 200 V R reliability characteristics. V at I (typ. 125 C) 0.75 V F F These devices are intended for use in snubber boost, t 25 ns rr lighting, as high frequency rectifiers, and freewheelin g T max. 175 C J diodes. Package SMF (DO-219AB) Their extremely optimized stored charge and low recovery Circuit configuration Single current minimize the switching losses and reduce power dissipation in the switching element. MECHANICAL DATA Case: SMF (DO-219AB) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 200 V RRM (1) Average rectified forward current I T = 150 C 2 F(AV) C A Non-repetitive peak surge current I T = 25 C 50 FSM J Operating junction and storage temperature range T , T -65 to +175 C J Stg Note (1) Device on PCB with 8 mm x 16 mm soldering lands Revision: 03-Feb-2021 Document Number: 95789 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-2EFH02-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 200 - - BR R R I = 2 A - 0.88 0.95 V F Forward voltage V F I = 2 A, T = 125 C - 0.75 0.82 F J V = V rated - - 2 R R Reverse leakage current I A R T = 125 C, V = V rated - 1 8 J R R Junction capacitance C V = 200 V - 8 - pF T R DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 24 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R rr Reverse recovery time t ns rr T = 25 C -16- J T = 125 C - 22 - J I = 2 A F T = 25 C - 2 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3 - J V = 160 V R T = 25 C - 16 - J Reverse recovery charge Q nC rr T = 125 C - 30 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Device mounted on PCB with 8 mm x 16 mm Thermal resistance, junction to mount R -- 15 C/W thJM soldering lands Device mounted on PCB with 2 mm x 3.5 mm Thermal resistance, junction to ambient R - - 130 C/W thJA soldering lands 0.015 g Approximate weight 0.0005 oz. Marking device Case style SMF (DO-219AB) MEH 100 100 175 C 10 150 C T = 175 C 10 J 125 C 1 T = 150 C J 0.1 1 T = 125 C J 25 C T = 25 C 0.01 J T = -40 C J 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 50 100 150 200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 03-Feb-2021 Document Number: 95789 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R