Product Information

VS-30ETH06S-M3

VS-30ETH06S-M3 electronic component of Vishay

Datasheet
Rectifiers 600V 30A IF (TO-263AB) 200A IFSM

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4119 ea
Line Total: USD 1.41

8368 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4947 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.1043
10 : USD 1.0348
100 : USD 0.9597
500 : USD 0.9114
1000 : USD 0.8603

8368 - WHS 2


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 1.4119
10 : USD 1.2221
100 : USD 1.0512
500 : USD 0.9409
1000 : USD 0.8566
2000 : USD 0.8507
5000 : USD 0.8294
10000 : USD 0.8234
25000 : USD 0.8033

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Tradename
LoadingGif

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VS-30ETH06S-M3, VS-30ETH06-1-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 2 1 125 C operating junction temperature 1 3 Meets MSL level 1, per J-STD-020, LF maximum peak 2 2 of 245 C TO-262AA D PAK (TO-263AB) 3 Material categorization: for definitions of compliance Base please see www.vishay.com/doc 99912 cathode 2 2 DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery. 1 3 1 3 The planar structure and the platinum doped life time N/C Anode N/C Anode control guarantee the best overall performance, ruggedness VS-30ETH06S-M3 VS-30ETH06-1-M3 and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling PRIMARY CHARACTERISTICS diodes. Their extremely optimized stored charge and low recovery I 30 A F(AV) current minimize the switching losses and reduce over V 600 V R dissipation in the switching element and snubbers. V at I 1.34 V F F t typ. 28 ns rr T max. 175 C J 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 103 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C 200 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 30 A - 2.0 2.6 F Forward voltage V F I = 30 A, T = 150 C - 1.34 1.75 F J V = V rated - 0.3 50 R R Reverse leakage current I A R T = 150 C, V = V rated - 60 500 J R R Junction capacitance C V = 600 V - 33 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 24-Oct-17 Document Number: 96236 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30ETH06S-M3, VS-30ETH06-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 28 35 F F R Reverse recovery time t T = 25 C -31 - ns rr J T = 125 C - 77 - J I = 30 A F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7.7 - J V = 200 V R T = 25 C - 65 - J Reverse recovery charge Q nC rr T = 125 C - 345 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -0.71.1 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient per leg Thermal resistance, R Mounting surface, flat, smooth, and greased - 0.2 - thCS case to heatsink -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style D PAK (TO-263AB) 30ETH06S Marking device Case style TO-262AA 30ETH06-1 1000 1000 100 T = 175 C J T = 150 C J 10 T = 125 C 100 J T = 100 C 1 J T = 175 C J 0.1 T = 150 C J T = 25 C J 10 T = 25 C J 0.01 0.001 1 0.0001 0 0.5 1 1.5 2 2.5 3 3.5 0 100 200 300 400 500 600 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 24-Oct-17 Document Number: 96236 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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