VS-EPH6007L-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt FEATURES Base cathode Low forward voltage drop 2 Hyperfast soft recovery time 175 C operating junction temperature 2 1 Material categorization: for definitions of compliance please see 1 3 Cathode Anode 3 www.vishay.com/doc 99912 TO-247AD 2L VS-EPH6007L-N3 DESCRIPTION / APPLICATIONS Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery PRIMARY CHARACTERISTICS time, and soft recovery. I 60 A F(AV) The planar structure and the platinum doped life time control V 650 V R guarantee the best overall performance, ruggedness and V at I 1.4 V F F reliability characteristics. t typ. 65 ns rr These devices are intended for use in PFC Boost stage in T max. 175 C J the AC/DC section of SMPS, inverters or as freewheeling Package TO-247AD 2L diodes. Circuit configuration Single The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage V 650 V RRM Average rectified forward current I T = 98 C (d = 0.50) 60 F(AV) C A Non-repetitive peak surge current I T = 25 C, t = 8.3 ms half sine wave 520 FSM C p Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 650 - - R blocking voltage V R V I = 60 A - 1.8 2.2 F Forward voltage V F I = 60 A, T = 150 C - 1.4 1.8 F J V = V rated - 0.02 30 R R Reverse leakage current I A R T = 150 C, V = V rated - - 300 J R R Junction capacitance C V = 650 V - 37 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 15-May-2018 Document Number: 96451 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-EPH6007L-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 44 - F F R Reverse recovery time t T = 25 C -65- ns rr J T = 125 C - 94 - J I = 60 A F T = 25 C - 21 - J Peak recovery current I dI /dt = 1000 A/s A RRM F T = 125 C - 40 - J V = 400 V R T = 25 C - 720 - J Reverse recovery charge Q nC rr T = 125 C - 2300 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - 175 C J Stg temperature range Thermal resistance, R --0.65C/W thJC junction to case Thermal resistance, R Mounting surface, flat, smooth, and greased - 0.5 - thCS case to heatsink -5.5 - g Weight -0.2 - oz. 1.2 2.4 kgf cm Mounting torque - (10) (20) (lbf in) Marking device Case style TO-247 2L EPH6007L Revision: 15-May-2018 Document Number: 96451 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000