VS-30MQ040HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 3 A FEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long term reliability Cathode Anode Small footprint, surface mountable High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AC (SMA) Meets JESD 201 class 2 whisker test AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY Package DO-214AC (SMA) APPLICATIONS Switching power supplies I 3 A F(AV) Meter protection V 40 V R Reverse protection for power input to PC board circuits V at I 0.46 V F F Battery isolation and charging I 20 mA at 125 C Low threshold voltage diode RM Freewheeling or by-pass diode T max. 150 C J Low voltage clamp Diode variation Single die E 6.0 mJ DESCRIPTION AS The VS-30MQ040HM3 Schottky rectifier is designed to be used for low power applications where a reverse voltage of 40 V is encountered and surface mountable is required. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 3 A F(AV) V 40 V RRM I t = 5 s sine 330 A FSM p V 2 A , T = 125 C 0.43 V F pk J T Range -40 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-30MQ040HM3 UNITS Maximum DC reverse voltage V R 40 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 50 % duty cycle at T = 89 C, rectangular waveform L Maximum average forward current 2 I On PC board 9 mm island 3A F(AV) See fig. 4 (0.013 mm thick copper pad area) Maximum peak one cycle Following any rated 5 s sine or 3 s rect. pulse 330 non-repetitive surge current I load condition and with A FSM 10 ms sine or 6 ms rect. pulse 140 See fig. 6 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 12 mH 6.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 02-Apr-15 Document Number: 94841 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30MQ040HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 1 A 0.42 T = 25 C J 3 A 0.51 Maximum forward voltage drop (1) V V FM See fig. 1 1 A 0.34 T = 125 C J 3 A 0.46 T = 25 C 0.5 Maximum reverse leakage current J I V = Rated V mA RM R R See fig. 2 T = 125 C 20 J Threshold voltage V 0.26 V F(TO) T = T maximum J J Forward slope resistance r 64.6 m t Typical junction capacitance C V = 10 V , T = 25 C, test signal = 1 MHz 134 pF T R DC J Typical series inductance L Measured lead to lead 5 mm from package body 2.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width = 300 s, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 80 C/W thJA junction to ambient 0.07 g Approximate weight 0.002 oz. Marking device Case style SMA (similar D-64) 3F Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 02-Apr-15 Document Number: 94841 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000