VS-40CPQ060HN3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A Base FEATURES common cathode 150 C T operation J 2 Very low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical 3 strength and moisture resistance 2 1 Guard ring for enhanced ruggedness and long term 13 Anode Anode reliability 2 TO-247AC Common AEC-Q101 qualified cathode Meets JESD-201 class 1A whisker test Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS I 2 x 20 A F(AV) DESCRIPTION V 60 V R The VS-40CPQ060HN3 center tap Schottky rectifier ha s V at I 0.49 V F F been optimized for very low forward voltage drop with I typ. 96 mA at 125 C RM moderate leakage. The proprietary barrier technology allows T max. 150 C J for reliable operation up to 150 C junction temperature. E 18 mJ Typical applications are in switching power supplies, AS converters, freewheeling diodes, and reverse battery Package TO-247AC protection. Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 40 A F(AV) V 60 V RRM I t = 5 s sine 3200 A FSM p V 20 A , T = 125 C (per leg) 0.49 V F pk J T -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-40CPQ060HN3 UNITS Maximum DC reverse voltage V R 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 120 C, rectangular waveform 40 F(AV) C See fig. 5 A Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 3200 non-repetitive surge current per leg I condition and with rated FSM See fig. 7 V applied 10 ms sine or 6 ms rect. pulse 320 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 2 A, L = 9.0 mH 18 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 28-Jul-2020 Document Number: 96566 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-40CPQ060HN3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 20 A 0.53 T = 25 C J 40 A 0.68 Maximum forward voltage drop per leg (1) V V FM See fig. 1 20 A 0.49 T = 125 C J 40 A 0.64 T = 25 C 1.7 J (1) Maximum reverse leakage current per leg I V = rated V mA RM R R T = 125 C 180 J (1) Typical reverse leakage current per leg I T = 125 C V = rated V 96 mA RM J R R Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 1600 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 7.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -55 to 150 C J Stg temperature range Maximum thermal resistance, DC operation 1.25 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 0.63 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.24 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) Marking device Case style TO-247AC 40CPQ060H Revision: 28-Jul-2020 Document Number: 96566 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000