VS-C08ET07T-M3 www.vishay.com Vishay Semiconductors 650 V Power SiC Merged PIN Schottky Diode, 8 A FEATURES Majority carrier diode using Schottky technology Base cathode on SiC wide band gap material 2 2 Positive V temperature coefficient for easy F paralleling Virtually no recovery tail and no switching losses 1 Temperature invariant switching behavior 1 3 175 C maximum operating junction temperature 3 Cathode Anode 2L TO-220AC MPS structure for high ruggedness to forward current surge events Meets JESD 201 class 1A whisker test Solder Bath temperature 275 C maximum, 10 s per JESD 22-B106 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I 8 A F(AV) please see www.vishay.com/doc 99912 V 650 V R DESCRIPTION / APPLICATIONS V at I at 150 C 1.7 V F F T max. 175 C Wide band gap SiC based 650 V Schottky diode, designed J for high performance and ruggedness. I at V at 175 C 5 A R R Q (V = 400 V) 23 nC Optimum choice for high speed hard switching and efficient C R operation over a wide temperature range, it is also Package 2L TO-220AC recommended for all applications suffering from Silicon Circuit configuration Single ultrafast recovery behavior. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters. MECHANICAL DATA Case: 2L TO-220AC Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Mounting torque: 10 in-lbs maximum ABSOLUTE MAXIMUM RATINGS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 650 V RRM Average rectified forward current I T = 126 C (DC) 8 A F(AV) C DC blocking voltage V 650 V DC Repetitive peak surge current I T = 25 C, f = 50 Hz, square wave, DC = 25 % 29.5 FRM C T = 25 C, t = 10 ms, half sine wave 57 A C p Non-repetitive peak forward surge current I FSM T = 110 C, t = 10 ms, half sine wave 49 C p T = 25 C 54 C (1) Power dissipation P W tot T = 110 C 23 C T = 25 C 16 C 2 2 2 I t value i dt A s T = 110 C 12 C (2) Operating junction and storage temperatures T , T -55 to +175 C J Stg Notes (1) Based on maximum R th (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 02-Jul-2020 Document Number: 96718 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-C08ET07T-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 8 A - 1.50 1.80 F Forward voltage V I = 8 A, T = 150 C - 1.7 2.1 V F F J I = 8 A, T = 175 C - 1.8 - F J V = V rated - - 45 R R Reverse leakage current I V = V rated, T = 150 C - - 100 A R R R J V = V rated, T = 175 C - 5 - R R J V = 1 V, f = 1 MHz - 355 - R Total capacitance C pF V = 400 V, f = 1 MHz - 37 - R Total capacitive charge Q V = 400 V, f = 1 MHz - 23 - nC C R THERMAL - MECHANICAL SPECIFICATIONS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, junction-to-case R -22.8C/W thJC Marking device C08ET07T Axis Title Axis Title 16 10000 1000 10000 14 T = 25 C 12 J 1000 1000 10 T = -55 C J T = 125 C J 8 T = 150 C 100 J T = 175 C J 6 100 100 4 2 T = 25 C J f = 1.0 MHz 0 10 10 10 0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 100 1000 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Axis Title Axis Title 10 10000 1000 10000 1 1000 1000 T = 25 C J 0.1 T = 175 C 100 J T = 110 C J T =150 C 100 100 J 0.01 T = 125 C J T = 25 C J T = -55 C J 0.001 10 10 10 0 100 200300 400500 600700 0.0001 0.001 0.01 V - Reverse Voltage (V) t (s) p R Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 4 - Non-Repetitive Peak Forward Surge Current vs. Pulse Duration (Square Wave) Revision: 02-Jul-2020 Document Number: 96718 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2nd line 2nd line I - Reverse Current (A) I - Instantaneous Forward Current (A) R F 1st line 1st line 2nd line 2nd line 2nd line 2nd line I (A) C - Junction Capacitance (pF) FSM T 1st line 1st line 2nd line 2nd line