VS-CPV363M4FPbF www.vishay.com Vishay Semiconductors IGBT SIP Module (Fast IGBT) FEATURES Fully isolated printed circuit board mount package Switching-loss rating includes all tail losses HEXFRED soft ultrafast diodes Optimized for medium speed 1 kHz to 10 kHz, see fig. 1 for current vs. frequency curve IMS-2 Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE DESCRIPTION V 600 V CES The IGBT technology is the key to Vishays Semiconductors I per phase (3.1 kW total) with advanced line of IMS (insulated metal substrate) power RMS 11 A RMS T = 90 C C modules. These modules are more efficient than T 125 C J comparable bipolar transistor modules, while at the same Supply voltage 360 V time having the simpler gate-drive requirements of the DC familiar power MOSFET. This superior technology has now Power factor 0.8 been coupled to a state of the art materials system that Modulation depth (see fig. 1) 115 % maximizes power throughput with low thermal resistance. V (typical) at I = 8.7 A, 25 C 1.37 V CE(on) C This package is highly suited to motor drive applications and Speed 1 kHz to 10 kHz where space is at a premium. Package SIP Circuit configuration Three phase inverter ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Collector to emitter voltage V 600 V CES T = 25 C 16 C Continuous collector current, each IGBT I C T = 100 C 8.7 C (1) Pulsed collector current I 50 CM A (2) Clamped inductive load current I 50 LM Diode continuous forward current I T = 100 C 6.1 F C Diode maximum forward current I 50 FM Gate to emitter voltage V 20 V GE Isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL RMS T = 25 C 36 C Maximum power dissipation, each IGBT P W D T = 100 C 14 C Operating junction and storage temperature range T , T -40 to +150 J Stg C Soldering temperature For 10 s, (0.063 (1.6 mm) from case) 300 5 to 7 lbf in Mounting torque 6-32 or M3 screw (0.55 to 0.8) (N m) Notes (1) Repetitive rating V = 20 V, pulse width limited by maximum junction temperature (see fig. 20) GE (2) V = 80 % (V ), V = 20 V, L = 10 H, R = 22 (see fig. 19) CC CES GE g Revision: 25-Oct-17 Document Number: 94484 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-CPV363M4FPbF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTYP. MAX. UNITS Junction to case, each IGBT, one IGBT in conduction R -3.5 thJC Junction to case, each DIODE, one DIODE in conduction R -5.5 C/W thJC Case to sink, flat, greased surface R 0.10 - thCS 20 - g Weight of module 0.7 - oz. ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS (1) Collector to emitter breakdown voltage V V = 0 V, I = 250 A 600 - - V (BR)CES GE C Temperature coefficient of breakdown voltage V T V = 0 V, I = 1.0 mA - 0.69 - V/C (BR)CES J GE C I = 8.7 A - 1.37 1.5 C V = 15 V GE Collector to emitter saturation voltage V I = 16 A - 1.63 - CE(on) C see fig. 2, 5 V I = 8.7 A, T = 150 C - 1.37 - C J Gate threshold voltage V 3.0 - 6.0 GE(th) V = V , I = 250 A CE GE C Temperature coefficient of threshold voltage V / T -- 11 - mV/C GE(th) J (2) Forward transconductance g V = 100 V, I = 8.7 A 6.0 8.0 - S fe CE C V = 0 V, V = 600 V - - 250 A GE CE Zero gate voltage collector current I CES V = 0 V, V = 600 V, T = 150 C - - 2500 A GE CE J I = 12 A -1.3 1.7 V C Diode forward voltage drop V see fig. 13 FM I = 12 A, T = 150 C - 1.2 1.6 V C J Gate to emitter leakage current I V = 20 V - - 100 nA GES GE Notes (1) Pulse width 80 s, duty factor 0.1 % (2) Pulse width 5.0 s single shot Revision: 25-Oct-17 Document Number: 94484 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000