VS-ETX1506-1-M3 Vishay

VS-ETX1506S-M3, VS-ETX1506-1-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES Hyperfast recovery time, extremely low Q rr Low forward voltage drop 175 C operating junction temperature Low leakage current 2 1 Designed and qualified according to 1 3 JEDEC -JESD 47 2 2 D PAK (TO-263AB) 3 TO-262AA Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C Base Material categorization: for definitions of compliance cathode please see www.vishay.com/doc 99912 2 2 DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast 3 recover time, and soft recovery. 1 3 1 N/C Anode N/C Anode The planar structure and the platinum doped life time control VS-ETX1506S-M3 VS-ETX1506-1-M3 guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC Boost stage in PRIMARY CHARACTERISTICS the AC/DC section of SMPS, inverters or as freewheeling I 15 A F(AV) diodes. V 600 V R The extremely optimized stored charge and low recovery V at I 1.55 V F F current minimize the switching losses and reduce over t (typ.) 18 ns rr dissipation in the switching element and snubbers. T max. 175 C J 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current I T = 127 C 15 F(AV) C A Non-repetitive peak surge current I T = 25 C 120 FSM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 15 A - 2.5 3.4 F Forward voltage V F I = 15 A, T = 150 C - 1.55 2 F J V = V rated - 0.02 36 R R Reverse leakage current I A R T = 150 C, V = V rated - 40 250 J R R Junction capacitance C V = 600 V - 12 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 25-Oct-17 Document Number: 96341 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-ETX1506S-M3, VS-ETX1506-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 17 23 F F R I = 15 A, dI /dt = 100 A/s, V = 30 V - 18 30 F F R Reverse recovery time t ns rr T = 25 C -20- J T = 125 C - 45 - J I = 15 A F T = 25 C - 2.7 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 5.5 - J V = 390 V R T = 25 C - 26 - J Reverse recovery charge Q nC rr T = 125 C - 130 - J Reverse recovery time t -32- ns rr I = 15 A F Peak recovery current I T = 125 C dI /dt = 800 A/s -17- A RRM J F V = 390 V R Reverse recovery charge Q - 290 - nC rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -1.31.51C/W thJC junction to case Thermal resistance, R Typical socket mount - - 70 thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth, and greased - 0.5 - thCS case to heatsink -2.0 - g Weight -0.07- oz. 6 12 kgf cm Mounting torque - (5) (10) (lbf in) 2 Case style D PAK (TO-263AB) ETX1506S Marking device Case style TO-262 ETX1506-1 100 1000 175 C 100 150 C T = 175 C J 125 C 10 100 C 1 10 75 C T = 150 C J 0.1 50 C 25 C T = 25 C J 0.01 1 0.001 100 200 300 400 500 600 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Reverse Voltage - V (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 25-Oct-17 Document Number: 96341 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F Reverse Current - I (A) R