VS-GB90DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A FEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED low Q , low switching energy rr Positive V temperature coefficient CE(on) Fully isolated package Very low internal inductance ( 5 nH typical) SOT-227 Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 1200 V CES BENEFITS I DC 90 A at 90 C C Designed for increased operating efficiency in power V typical at 75 A, 25 C 3.3 V CE(on) conversion: UPS, SMPS, welding, induction heating Speed 8 kHz to 30 kHz Easy to assemble and parallel Package SOT-227 Direct mounting on heatsink Circuit configuration Single switch with AP diode Plug-in compatible with other SOT-227 packages Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Collector to emitter voltage V 1200 V CES T = 25 C 149 C Continuous collector current I C T = 90 C 90 C Pulsed collector current I 200 CM A Clamped inductive load current I 200 LM T = 25 C 76 C Diode continuous forward current I F T = 90 C 46 C Gate to emitter voltage V 20 V GE T = 25 C 862 C Power dissipation, IGBT P D T = 90 C 414 C W T = 25 C 357 C Power dissipation, diode P D T = 90 C 171 C Isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL Revision: 10-Sep-2019 Document Number: 94722 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-GB90DA120U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown V V = 0 V, I = 250 A 1200 - - BR(CES) GE C voltage V = 15 V, I = 75 A - 3.3 3.8 GE C Collector to emitter voltage V V = 15 V, I = 75 A, T = 125 C - 3.6 3.9 CE(on) GE C J V V = 15 V, I = 75 A, T = 150 C - 3.7 - GE C J V = V , I = 250 A 4 5 6 CE GE C Gate threshold voltage V GE(th) V = V , I = 250 A, T = 125 C - 3.2 - CE GE C J Temperature coefficient of threshold V /T V = V , I = 1 mA (25 C to 125 C) - -12 - mV/C GE(th) J CE GE C voltage V = 0 V, V = 1200 V - 7 250 A GE CE Collector to emitter leakage current I V = 0 V, V = 1200 V, T = 125 C - 1.4 10 CES GE CE J mA V = 0 V, V = 1200 V, T = 150 C - 6.5 20 GE CE J V = 0 V, I = 75 A - 3.4 5.0 GE F Forward voltage drop, diode V V = 0 V, I = 75 A, T = 125 C - 3.2 5.2 V FM GE F J V = 0 V, I = 75 A, T = 150 C - 3.05 - GE F J Gate to emitter leakage current I V = 20 V - - 250 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q - 690 - g Gate to emitter charge (turn-on) Q I = 50 A, V = 600 V, V = 15 V -65 - nC ge C CC GE Gate to collector charge (turn-on) Q - 250 - gc Turn-on switching loss E -1.2 - on Turn-off switching loss E -2.1 - mJ off Total switching loss E -3.3 - tot I = 75 A, V = 600 V, C CC Turn-on delay time t V = 15 V, R = 5 - 250 - d(on) GE g L = 500 H, T = 25 C J Rise time t -38 - r ns Turn-off delay time t Energy losses - 280 - d(off) include tail and Fall time t -90 - f diode recovery Turn-on switching loss E -1.7 - on Diode used HFA16PB120 Turn-off switching loss E -4.08- mJ off Total switching loss E -5.78- tot I = 75 A, V = 600 V, C CC Turn-on delay time t V = 15 V, R = 5 - 245 - d(on) GE g L = 500 H, T = 125 C J Rise time t -48 - r ns Turn-off delay time t - 280 - d(off) Fall time t - 140 - f T = 150 C, I = 200 A, R = 22 J C g Reverse bias safe operating area RBSOA V = 15 V to 0 V, V = 900 V, Fullsquare GE CC V = 1200 V, L = 500 H P Diode reverse recovery time t - 140 - ns rr Diode peak reverse current I I = 50 A, dI /dt = 200 A/s, V = 200 V -13 - A rr F F R Diode recovery charge Q - 860 - nC rr Diode reverse recovery time t - 210 - ns rr I = 50 A, dI /dt = 200 A/s, V = 200 V, F F R Diode peak reverse current I -19 - A rr T = 125 C J Diode recovery charge Q - 1880 - nC rr Revision: 10-Sep-2019 Document Number: 94722 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000