IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 600V CES C C C I = 90A, T =100C C C t 5s, T = 175C SC J(max) G E E C C G G E V typ. = 1.65V IC = 75A CE(ON) IRGP6690DPbF IRGP6690D-EPbF n-channel TO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Features Benefits Low V and switching losses High efficiency in a wide range of applications CE(ON) Optimized diode for full bridge hard switch converters Optimized for welding and H bridge converters Improved reliability due to rugged hard switching Square RBSOA and maximum junction temperature 175C performance and higher power capability 5s short circuit SOA Enables short circuit protection scheme Positive V temperature coefficient Excellent current sharing in parallel operation CE (ON) Lead-free, RoHS compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGP6690DPBF TO-247AC Tube 25 IRGP6690DPBF IRGP6690D-EPBF TO-247AD Tube 25 IRGP6690D-EPBF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 140 C C I T = 100C Continuous Collector Current 90 C C I Pulse Collector Current, V = 15V 225 CM GE A I Clamped Inductive Load Current, V = 20V 300 LM GE I T = 100C Diode Repetitive Peak Forward Current 45 FRM C I Diode Maximum Forward Current 300 FM V Continuous Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 483 W D C P T = 100C Maximum Power Dissipation 241 D C T Operating Junction and -40 to +175 C J T Storage Temperature Range STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) 0.31 R (IGBT) JC Thermal Resistance Junction-to-Case-(each Diode) 2.10 R (Diode) JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 R JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6690DPbF/IRGP6690D-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.55 V/C V = 0V, I = 3mA (25C-175C) V /T GE C (BR)CES J 1.65 1.95 I = 75A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.05 V I = 75A, V = 15V, T = 150C CE(on) C GE J 2.10 I = 75A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 2.1mA GE(th) CE GE C /T Threshold Voltage Temperature Coeff. -19 mV/C V = V , I = 2.1mA (25C-175C) V CE GE C GE(th) J gfe Forward Transconductance 50 S V = 50V, I = 75A, PW = 20s CE C 1.5 100 A V = 0V, V = 600V GE CE I Collector-to-Emitter Leakage Current CES 1.4 mA V = 0V, V = 600V, T = 175C GE CE J Gate-to-Emitter Leakage Current I 200 nA V = 20V GES GE 2.3 3.3 V I = 18A F V Diode Forward Voltage Drop FM 1.5 I = 18A, T = 175C F J Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge 140 I = 75A g C Q Gate-to-Emitter Charge 40 nC V = 15V ge GE V = 400V Q Gate-to-Collector Charge 60 gc CC E Turn-On Switching Loss 2.4 on E Turn-Off Switching Loss 2.2 mJ off I = 75A, V = 400V, V =15V C CC GE E Total Switching Loss 4.6 total R = 10, L = 400H, T = 25C G J t Turn-On delay time 85 d(on) Energy losses include tail & diode t Rise time 86 r ns reverse recovery t Turn-Off delay time 222 d(off) t Fall time 53 f E Turn-On Switching Loss 3.1 on E Turn-Off Switching Loss 2.8 mJ off I = 75A, V = 400V, V =15V C CC GE E Total Switching Loss 5.9 total R = 10, L = 400H, T = 175C G J t Turn-On delay time 67 d(on) Energy losses include tail & diode t Rise time 92 r ns reverse recovery t Turn-Off delay time 227 d(off) t Fall time 78 f C Input Capacitance 4720 V = 0V ies GE C Output Capacitance 270 pF V = 30V CC oes C Reverse Transfer Capacitance 140 f = 1.0MHz res T = 175C, I = 300A J C FULL SQUARE V = 480V, Vp 600V RBSOA Reverse Bias Safe Operating Area CC V = +20V to 0V GE T = 150C,V = 400V, Vp 600V J CC SCSOA Short Circuit Safe Operating Area 5 s V = +15V to 0V GE T = 175C Erec Reverse Recovery Energy of the Diode 210 J J V = 400V, I = 18A t Diode Reverse Recovery Time 90 ns CC F rr I Peak Reverse Recovery Current 26 A V = 15V, Rg = 10 GE rr Notes: V = 80% (V ), V = 20V, L = 400H, R = 10. CC CES GE G R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. fsw =40KHz, refer to figure 26. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 14, 2014