VS-HFA08TB120S-M3 www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 8 A FEATURES Ultrafast and ultrasoft recovery Very low I and Q RRM rr Specified at operating conditions Meets MSL level 1, per J-STD-020, 2 1 LF maximum peak of 245 C Material categorization: for definitions of compliance 3 please see www.vishay.com/doc 99912 2 D PAK (TO-263AB) BENEFITS Base Reduced RFI and EMI cathode Reduced power loss in diode and switching transistor 2 Higher frequency operation Reduced snubbing Reduced parts count 1 3 N/C Anode DESCRIPTION VS-HFA08TB120S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 8 A continuous current, the VS-HFA08TB120S is especially well suited for use as the PRIMARY CHARACTERISTICS companion diode for IGBTs and MOSFETs. In addition to I 8 A F(AV) ultrafast recovery time, the HEXFRED product line features V 1200 V extremely low values of peak recovery current (I ) and R RRM does not exhibit any tendency to snap-off during the t b V at I 2.4 V F F portion of recovery. The HEXFRED features combine to offer t (typ.) 28 ns rr designers a rectifier with lower noise and significantly lower T max. 150 C switching losses in both the diode and the switching J transistor. These HEXFRED advantages can help to 2 Package D PAK (TO-263AB) significantly reduce snubbing, component count and Circuit configuration Single heatsink sizes. The HEXFRED VS-HFA08TB120S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 1200 V R Maximum continuous forward current I T = 100 C 8 F C Single pulse forward current I 130 A FSM Maximum repetitive forward current I 32 FRM T = 25 C 73.5 C Maximum power dissipation P W D T = 100 C 29 C Operating junction and storage temperature range T , T -55 to +150 C J Stg Revision: 27-Oct-17 Document Number: 96218 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-HFA08TB120S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 1200 - - BR R breakdown voltage I = 8.0 A - 2.6 3.3 F V Maximum forward voltage V I = 16 A - 3.4 4.3 FM F I = 8.0 A, T = 125 C - 2.4 3.1 F J -0.31 10 V = V rated Maximum reverse R R I A RM leakage current T = 125 C, V = 0.8 x V rated J R R - 135 1000 Junction capacitance C V = 200 V - 11 20 pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 28 - rr F F R Reverse recovery time t T = 25 C -63 95 ns rr1 J t T = 125 C - 106 160 rr2 J I T = 25 C - 4.5 8.0 RRM1 J Peak recovery current A I = 8.0 A F I T = 125 C - 6.2 11 RRM2 J dI /dt = 200 A/s F Q T = 25 C - 140 380 rr1 J V = 200 V R Reverse recovery charge nC Q T = 125 C - 335 880 rr2 J dI /dt1 T = 25 C - 133 - Peak rate of fall of (rec)M J A/s recovery current during t b dI /dt2 T = 125 C - 85 - (rec)M J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C lead Thermal resistance, R --1.7 thJC junction to case K/W Thermal resistance, R Typical socket mount - - 40 thJA junction to ambient -2.0 - g Weight -0.07 - oz. 2 Marking device Case style D PAK (TO-263AB) HFA08TB120S Revision: 27-Oct-17 Document Number: 96218 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000