VS-HFA15TB60S-M3, VS-HFA15TB60-1-M3 www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 15 A FEATURES Ultrafast and ultrasoft recovery Very low I and Q RRM rr Meets MSL level 1, per J-STD-020, LF maximum 2 peak of 245 C 1 1 Designed and qualified for industrial level 3 2 2 Material categorization: for definitions of compliance D PAK (TO-263AB) 3 TO-262AA please see www.vishay.com/doc 99912 Base cathode BENEFITS 2 2 Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation 1 3 Reduced snubbing 1 3 N/C Anode N/C Anode Reduced parts count VS-HFA15 TB60S-M3 VS-HFA15 TB60-1-M3 DESCRIPTION VS-HFA15TB60S, VS-HFA15TB60-1 is a state of the art PRIMARY CHARACTERISTICS ultrafast recovery diode. Employing the latest in epitaxial I 15 A F(AV) construction and advanced processing techniques it V 600 V features a superb combination of characteristics which R result in performance which is unsurpassed by any rectifier V at I 1.2 V F F previously available. With basic ratings of 600 V and t (typ.) 23 ns rr 15 A continuous current, the VS-HFA15TB60S, T max. 150 C J VS-HFA15TB60-1 is especially well suited for use as the 2 Package D PAK (TO-263AB), TO-262AA companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED product line features Circuit configuration Single extremely low values of peak recovery current (I ) and RRM does not exhibit any tendency to snap-off during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA15TB60S, VS-HFA15TB60-1 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 600 V R Maximum continuous forward current I T = 100 C 15 F C Single pulse forward current I 150 A FSM Maximum repetitive forward current I 60 FRM T = 25 C 74 C Maximum power dissipation P W D T = 100 C 29 C Operating junction and storage temperature range T , T -55 to +150 C J Stg Revision: 27-Oct-17 Document Number: 96313 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-HFA15TB60S-M3, VS-HFA15TB60-1-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 600 - - BR R breakdown voltage I = 15 A -1.3 1.7 F V Maximum forward voltage V I = 30 A See fig. 1 - 1.5 2.0 FM F I = 15 A, T = 125 C - 1.2 1.6 F J -1.0 10 Maximum reverse V = V rated R R I See fig. 2 A RM leakage current T = 125 C, V = 0.8 x V rated - 400 1000 J R R Junction capacitance C V = 200 V See fig. 3 - 25 50 pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 23 - rr F F R Reverse recovery time t T = 25 C -50 60 ns rr1 J See fig. 5 t T = 125 C - 105 120 rr2 J I T = 25 C - 4.5 6.0 RRM1 J Peak recovery current A See fig. 6 I T = 125 C I = 15 A - 6.5 10 RRM2 J F dI /dt = 200 A/s F Q T = 25 C - 84 180 Reverse recovery charge rr1 J V = 200 V nC R See fig. 7 Q T = 125 C - 241 600 rr2 J Peak rate of fall of recovery dI /dt1 T = 25 C - 188 - (rec)M J current during t A/s b dI /dt2 T = 125 C - 160 - (rec)M J See fig. 8 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C lead Thermal resistance, R --1.7 thJC junction-to-case Thermal resistance, R Typical socket mount - - 80 K/W thJA junction-to-ambient Thermal resistance, R Mounting surface, flat, smooth, and greased - 0.5 - thCS case-to-heatsink -2.0 - g Weight -0.07 - oz. 2 Case style D PAK (TO-263AB) HFA15TB60S Marking device Case style TO-262AA HFA15TB60-1 Revision: 27-Oct-17 Document Number: 96313 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000