Product Information

VSKE236/04PBF

VSKE236/04PBF electronic component of Vishay

Datasheet
Diode Switching 400V 230A 2-Pin INT-A-PAK

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 69.207 ea
Line Total: USD 69.21

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 15
Multiples : 1
15 : USD 0

0 - WHS 2


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 69.207
10 : USD 66.1162
25 : USD 62.6344

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Series
Maximum Operating Temperature
Package / Case
Minimum Operating Temperature
Packaging
Mounting Style
Breakover Current Ibo Max
Current Rating
Off-State Leakage Current Vdrm Idrm
Brand
Circuit Type
Factory Pack Quantity :
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VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules) FEATURES High voltage Electrically isolated by DBC ceramic (AI O ) 2 3 3500 V isolating voltage RMS Industrial standard package High surge capability Glass passivated chips Modules uses high voltage power diodes in four basic configurations Simple mounting INT-A-PAK UL approved file E78996 Designed and qualified for multiple level Material categorization: for definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 I 165 A to 230 A F(AV) Type Modules - Diode, High Voltage APPLICATIONS Package INT-A-PAK DC motor control and drives Single diode, two diodes common anode, Battery chargers Circuit two diodes common cathode, two diodes Welders doubler circuit Power converters MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VSK.166.. VSK.196.. VSK.236.. UNITS 165 195 230 A I F(AV) T 100 100 100 C C I 260 305 360 F(RMS) 50 Hz 4000 4750 5500 A I FSM 60 Hz 4200 4980 5765 50 Hz 80 113 151 2 2 I t kA s 60 Hz 73 103 138 2 2 I t 798 1130 1516 kA s V 400 to 1600 V RRM T Range -40 to +150 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM VOLTAGE TYPE NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C CODE V V mA 04 400 500 08 800 900 VS-VSK.166 VS-VSK.196 12 1200 1300 20 VS-VSK.236 14 1400 1500 16 1600 1700 Revision: 29-Sep-15 Document Number: 94357 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS VSK.166 VSK.196 VSK.236 165 195 230 A Maximum average on-state I 180 conduction, half sine wave F(AV) current at case temperature 100 100 100 C Maximum RMS on-state current I 260 305 360 F(RMS) t = 10 ms 4000 4750 5500 No voltage Maximum peak, one-cycle reapplied t = 8.3 ms 4200 4980 5765 A on-state, non-repetitive I FSM t = 10 ms 3350 4000 4630 100 % V RRM surge current Sine half wave, reapplied t = 8.3 ms 3500 4200 4850 initial T = J t = 10 ms 80 113 151 No voltage T maximum J reapplied t = 8.3 ms 73 103 138 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 56 80 107 100 % V RRM reapplied t = 8.3 ms 52 73 98 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 798 1130 1516 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T maximum 0.73 0.69 0.7 F(TO)1 F(AV) F(AV) J V High level value of threshold voltage V (I > x I ), T maximum 0.88 0.78 0.83 F(TO)2 F(AV) J Low level value on-state r (16.7 % x x I < I < x I ), T maximum 1.5 1.3 1.2 t1 F(AV) F(AV) J slope resistance m High level value on-state r (I > x I ), T maximum 1.26 1.2 1.07 t2 F(AV) J I = x I , T = 25 C, 180 conduction FM F(AV) J Maximum forward voltage drop V 1.43 1.38 1.46 V FM 2 Average power = V x I + r x (I ) F(TO) F(AV) f F(RMS) BLOCKING PARAMETER SYMBOL TEST CONDITIONS VSK.166 VSK.196 VSK.236 UNITS Maximum peak reverse and I T = 150 C 20 mA RRM J off-state leakage current 50 Hz, circuit to base, all terminals shorted, RMS insulation voltage V 3500 V INS t = 1 s THERMAL AND MECHANICAL SPECIFICATIONS VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS VSK.166 VSK.196 VSK.236 Maximum junction operating and T , T -40 to +150 C J Stg storage temperature range Maximum thermal resistance, R DC operation 0.2 0.16 0.14 thJC junction to case per junction K/W Maximum thermal resistance, R Mounting surface smooth, flat and greased 0.05 thCS case to heatsink per module IAP to heatsink Mounting A mounting compound is recommended and 4 to 6 Nm torque 10 % busbar to IAP the torque should be rechecked after a period of 3 hours to allow for the spread of 200 g Approximate weight the compound. Lubricated threads. 7.1 oz. Case style INT-A-PAK Revision: 29-Sep-15 Document Number: 94357 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
BC
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
ROEDERSTEIN / VISHAY
SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
SPECTROL
SPECTROL ELECTRONICS
SPP
SPRAGUE (VISHAY)
TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
VISHAY SMALL SIGNAL
VISHAY SPECIALTY CAPACITORS
Vishay Spectrol
Vishay Sprague
VISHAY TANSITOR
VISHAY TECHNO
Vishay Thin Film
Vishay Vitramon
VISHAY/BC COMPONENTS
Vishay/Beyschlag
Vishay/Dale
Vishay/General Semic
VISHAY/SILICONIX
VishayBC Components
VishayBeyschlag
VishayElectro-Films
VishayGeneral Semiconductor
VishaySemiconductors
VishaySprague
VishayVitramon
VIT
VITRAMON (VISHAY)
VITRAMON/VISHAY
VITROMON
VSC
VSO
VSS

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