Product Information

VS-MBR3045CT-M3

VS-MBR3045CT-M3 electronic component of Vishay

Datasheet
Schottky Diodes & Rectifiers 45V 2 x 15A IF C.A. TO-220AB

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.6068 ea
Line Total: USD 2.61

164 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
155 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.7365
10 : USD 1.426
100 : USD 1.0994
500 : USD 0.9315
1000 : USD 0.759
3000 : USD 0.7418

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Hts Code
LoadingGif

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VS-MBR3045CT-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A FEATURES Base 2 common 150 C T operation J cathode Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical Anode 2 Anode strength and moisture resistance 13Common Guard ring for enhanced ruggedness and long term 3L TO-220AB cathode reliability Designed and qualified according to JEDEC -JESD 47 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I 2 x 15 A F(AV) please see www.vishay.com/doc 99912 V 45 V R DESCRIPTION V at I See Electrical table F F This center tap Schottky rectifier has been optimized for low I max. 100 mA at 125 C RM reverse leakage at high temperature. The proprietary barrier T max. 150 C J technology allows for reliable operation up to 150 C E 10 mJ AS junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and Package 3L TO-220AB reverse battery protection. Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform (per device) 30 A F(AV) V 35/45 V RRM I T = 123 C (per leg) 30 FRM C A I t = 5 s sine 1020 FSM p V 20 A , T = 125 C 0.6 V F pk J T Range -65 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBR3045CT-M3 UNITS Maximum DC reverse voltage V R 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 15 Maximum average forward I T = 123 C, rated V F(AV) C R current per device 30 Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 123 C 30 FRM R C Following any rated load A 5 s sine or 3 s rect. pulse condition and with rated 1020 V applied RRM Non-repetitive peak surge current I FSM Surge applied at rated load conditions halfwave, 200 single phase, 60 Hz Non-repetitive avalanche energy per leg E T = 25 C, I = 2 A, L = 5 mH 10 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 15-Aug-17 Document Number: 96257 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MBR3045CT-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 30 A T = 25 C 0.76 J (1) Maximum forward voltage drop V 20 A 0.6 V FM T = 125 C J 30 A 0.72 T = 25 C 1 J (1) Maximum instantaneous reverse current I Rated DC voltage mA RM T = 125 C 100 J Threshold voltage V 0.29 V F(TO) T = T maximum J J Forward slope resistance r 13.6 m t Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 800 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T -65 to +150 J C Maximum storage temperature range T -65 to +175 Stg Maximum thermal resistance, R DC operation 1.5 thJC junction to case per leg Typical thermal resistance, Mounting surface, smooth and greased R 0.50 C/W thCS case to heatsink Only for TO-220 Maximum thermal resistance, DC operation R 50 thJA 2 For D PAK and TO-262 junction to ambient 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) Marking device Case style 3L TO-220AB MBR3045CT Revision: 15-Aug-17 Document Number: 96257 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
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BEYSCHLAG
DALE
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