Product Information

VS-8TQ100STRL-M3

VS-8TQ100STRL-M3 electronic component of Vishay

Datasheet
Schottky Diodes & Rectifiers Schottky - D2PAK-e3

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

8000: USD 0.5963 ea
Line Total: USD 4770.4

776 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 8000  Multiples: 800
Pack Size: 800
Availability Price Quantity
776 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 8000
Multiples : 800
8000 : USD 0.5963

6259 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.5755
10 : USD 1.2995
100 : USD 1.004
500 : USD 0.7808
800 : USD 0.6762

     
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VS-8TQ080S-M3, VS-8TQ100S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base 175 C T operation J cathode 2 Low forward voltage drop High frequency operation High purity, high temperature epoxy 2 encapsulation for enhanced mechanical 1 strength and moisture resistance 1 3 3 Guard ring for enhanced ruggedness and long term N/C Anode 2 D PAK (TO-263AB) reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C PRIMARY CHARACTERISTICS Designed and qualified according to JEDEC -JESD 47 I 8 A F(AV) Material categorization: for definitions of compliance V 80 V, 100 V R please see www.vishay.com/doc 99912 V at I 0.58 V F F I 7 mA at 125 C RM DESCRIPTION T max. 175 C J The VS-8TQ... Schottky rectifier series has been optimized E 7.5 mJ AS for low reverse leakage at high temperature. The proprietary 2 Package D PAK (TO-263AB) barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching Circuit configuration Single power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 8 A F(AV) V Range 80/100 V RRM I t = 5 s sine 850 A FSM p V 8 A , T = 125 C 0.58 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-8TQ080S-M3VS-8TQ100S-M3UNITS Maximum DC reverse voltage V R 80 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 157 C, rectangular waveform 8 A F(AV) C See fig. 5 Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 850 non-repetitive surge current I condition and with rated A FSM 10 ms sine or 6 ms rect. pulse 230 See fig. 7 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 0.50 A, L = 60 mH 7.50 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 0.50 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 02-Nov-17 Document Number: 94946 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-8TQ080S-M3, VS-8TQ100S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 8 A 0.72 T = 25 C J Maximum forward voltage drop 16 A 0.88 (1) V V FM See fig. 1 8 A 0.58 T = 125 C J 16 A 0.69 T = 25 C 0.55 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 7 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 500 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and T , T -55 to +175 C J Stg storage temperature range Maximum thermal resistance, DC operation R 2.0 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth, and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 8TQ080S 2 Marking device Case style D PAK (TO-263AB) 8TQ100S T = 175 C J T = 150 C J T = 125 C J T = 175 C J T = 100 C J T = 125 C J T = 25 C J T = 75 C J T = 50 C J T = 25 C J 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 20 40 60 80 100 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 02-Nov-17 Document Number: 94946 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1000 100 10 100 1 10 0.1 0.01 1 0.001 0.1 0.0001 I - Instantaneous F Forward Current (A) I - Reverse Current (mA) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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