Product Information

VS-MUR820-M3

VS-MUR820-M3 electronic component of Vishay

Datasheet
Rectifiers 200V 8A TO-220 Fred Pt

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0204 ea
Line Total: USD 1.02

9877 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
308 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8239
10 : USD 0.7272
30 : USD 0.6769
100 : USD 0.4956
500 : USD 0.4653
1000 : USD 0.4513

9877 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.0204
10 : USD 0.8484
100 : USD 0.6158
500 : USD 0.5149
1000 : USD 0.4378
2000 : USD 0.3892
5000 : USD 0.3868

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Tradename
LoadingGif

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VS-MUR820-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 8 A FRED Pt FEATURES Base 2 Ultrafast recovery time cathode 2 Low forward voltage drop 175 C operating junction temperature Low leakage current 1 1 3 Designed and qualified according to JEDEC -JESD 47 3 Cathode Anode 2L TO-220AC Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS VS-MUR820 is the state of the art ultrafast recovery rectifier PRIMARY CHARACTERISTICS specifically designed with optimized performance of I 8 A F(AV) forward voltage drop and ultrafast recovery time. V 200 V R The planar structure and the platinum doped life time V at I 0.895 V F F control, guarantee the best overall performance, t typ. See Recovery table rr ruggedness and reliability characteristics. T max. 175 C J These devices are intended for use in the output rectification Package 2L TO-220AC stage of SMPS, UPS, DC/DC converters as well as Circuit configuration Single freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Peak repetitive reverse voltage V 200 V RRM Average rectified forward current I Total device, rated V , T = 150 C 8 F(AV) R C Non-repetitive peak surge current I 100 A FSM Peak repetitive forward current I Rated V , square wave, 20 kHz, T = 150 C 16 FM R C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R V I = 8 A - - 0.975 F Forward voltage V F I = 8 A, T = 150 C - - 0.895 F J V = V rated - - 5 R R Reverse leakage current I A R T = 150 C, V = V rated - - 250 J R R Junction capacitance C V = 200 V - 25 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 23-Nov-17 Document Number: 96186 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MUR820-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R I = 0.5 A, I = 1.0 A, I = 0.25 A - - 25 F R REC Reverse recovery time t ns rr T = 25 C -20 - J T = 125 C - 34 - J I = 8 A F T = 25 C - 1.7 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4.2 - J V = 160 V R T = 25 C - 23 - J Reverse recovery charge Q nC rr T = 125 C - 75 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, R --3.0 thJC junction to case Thermal resistance, R -- 50 C/W thJA junction to ambient Thermal resistance, Mounting surface, flat, smooth, and R -0.5 - thCS case to heatsink greased -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style 2L TO-220AC MUR820 100 100 T = 175 C J 10 T = 150 C J 10 T = 125 C J 1 T = 100 C J T = 175 C J 0.1 T = 150 C J 1 T = 25 C J 0.01 T = 25 C J 0.1 0.001 0 50 100 150 200 250 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 23-Nov-17 Document Number: 96186 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
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