Product Information

RF081LAM2STFTR

RF081LAM2STFTR electronic component of ROHM

Datasheet
Rectifiers 200V VR 1.1A IO SOD-128; PMDTM
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.6541 ea
Line Total: USD 3.27

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 5
Multiples : 1
5 : USD 0.6541
10 : USD 0.4423
100 : USD 0.2907
500 : USD 0.2703
1000 : USD 0.1605
5000 : USD 0.1496

0 - WHS 2


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 0.571
10 : USD 0.459
100 : USD 0.29
500 : USD 0.2225
1000 : USD 0.1712
3000 : USD 0.1584
6000 : USD 0.1464
9000 : USD 0.138

0 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 5
Multiples : 5
5 : USD 0.2131
25 : USD 0.1791
100 : USD 0.1574
120 : USD 0.1343
320 : USD 0.1276

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Hts Code
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RF081LAM2STF Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) Standard Fast Recovery 0.10 2.0 0.17 0.05 2.500.20 (1) Applications General rectification PMDTM Features Structure Cathode (2) 1) Low forward voltage 1.500.20 0.950.10 ROHM : PMDTM 2) Low switching loss JEDEC : SOD-128 : Manufacture Date 3) High current overload capacity Anode Taping Dimensions (Unit : mm) Construction Silicon epitaxial planar type Absolute Maximum Ratings (T = 25C) a Parameter Symbol Conditions Limits Unit V Duty0.5 200 Repetitive peak reverse voltage V RM V Direct reverse voltage 200 V Reverse voltage R Glass epoxy board mounted, I Average forward rectified current 1.1 A o 60Hz half sin wave, resistive load 60Hz half sin wave, I Non-repetitive forward surge current 25 A FSM non-repetitive at T=25C j Junction temperature T - 150 C j T - Storage temperature 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =1A Forward voltage 0.75 0.84 0.98 V F F I V =200V Reverse current -- 10 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 12 25 ns F R R Thermal resistance R Junction to lead -- 25C/W th(j-l) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2017.04 - Rev.B 1/4 3.700.20 4.700.14 1.4 4.4Datasheet RF081LAM2STF Electrical Characteristic Curves 100 100000 T = 150 C j 10000 T = 125 C j T = 150 C j 10 1000 T = 125 C j T = 75 C j 100 1 T = 75 C j 10 T = 25 C j 0.1 1 T = 25 C j T = 40 C 0.1 j 0.01 T = 40 C j 0.01 0.001 0.001 0 200 400 600 800 10001200140016001800 0 50 100 150 200 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25 C 8.3ms 8.3ms a 1cyc. 100 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2017.04 - Rev.B 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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