Product Information

VS-MURB1520-1-M3

VS-MURB1520-1-M3 electronic component of Vishay

Datasheet
Rectifiers 200V 15A TO-262 Fred Pt

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2325 ea
Line Total: USD 1.23

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 8000
Multiples : 8000
8000 : USD 0.5237

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Tradename
LoadingGif

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VS-MURB1520-M3, VS-MURB1520-1-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop Low leakage current 2 175 C operating junction temperature 3 3 1 2 Meets MSL level 1, per J-STD-020, 1 2 D PAK (TO-263AB) TO-262AA LF maximum peak of 245 C Base Material categorization: for definitions of compliance cathode please see www.vishay.com/doc 99912 2 2 DESCRIPTION / APPLICATIONS MUR.. series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance 1 3 1 3 of forward voltage drop and ultrafast recovery time. N/C Anode N/C Anode The planar structure and the platinum doped life time control, guarantee the best overall performance, VS-MURB1520-M3 VS-MURB1520-1-M3 ruggedness and reliability characteristics. These devices are intended for use in the output rectification PRIMARY CHARACTERISTICS stage of SMPS, UPS, DC/DC converters as well as I 15 A F(AV) freewheeling diode in low voltage inverters and chopper V 200 V motor drives. R Their extremely optimized stored charge and low recovery V at I 0.85 V F F current minimize the switching losses and reduce over t 35 ns rr dissipation in the switching element and snubbers. T max. 175 C J 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Peak repetitive reverse voltage V 200 V RRM Average rectified forward current I Total device, rated V , T = 150 C 15 F(AV) R C Non-repetitive peak surge current I 200 A FSM Peak repetitive forward current I Rated V , square wave, 20 kHz, T = 150 C 30 FM R C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R V I = 15 A - - 1.05 F Forward voltage V F I = 15 A, T = 150 C - - 0.85 F J V = V rated - - 10 R R Reverse leakage current I A R T = 150 C, V = V rated - - 500 J R R Junction capacitance C V = 200 V - 55 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 25-Oct-17 Document Number: 96316 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MURB1520-M3, VS-MURB1520-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R Reverse recovery time t T = 25 C -22 - ns rr J T = 125 C - 39 - J I = 15 A F T = 25 C - 1.6 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4.1 - J V = 160 V R T = 25 C - 19 - J Reverse recovery charge Q nC rr T = 125 C - 90 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, R --1.5 thJC junction-to-case Thermal resistance, R -- 50 C/W thJA junction-to-ambient Thermal resistance, Mounting surface, flat, smooth, and R -0.5 - thCS case-to-heatsink greased -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style D PAK (TO-263AB) MURB1520 Marking device Case style TO-262 MURB1520-1 100 1000 T = 175 C J 100 T = 150 C J 10 T = 125 C J 10 T = 100 C J T = 175 C J 1 T = 150 C J 1 T = 25 C J 0.1 T = 25 C J 0.1 0.01 0 0.3 0.6 0.9 1.2 1.5 0 50 100 150 200 250 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 25-Oct-17 Document Number: 96316 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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