VS-UFB80FA20 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 80 A FEATURES Two fully independent diodes Fully insulated package Ultrafast, soft reverse recovery, with high operation junction temperature (T max. = 175 C) J Low forward voltage drop Optimized for power conversion: welding and industrial SMPS applications Easy to use and parallel SOT-227 Industry standard outline UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 V 200 V R DESCRIPTION / APPLICATIONS I per module at T = 129 C 80 A F(AV) C The VS-UFB80FA20 insulated modules integrate two state t 27 ns rr of the art ultrafast recovery rectifiers in the compact, Type Modules - diode FRED Pt industry standard SOT-227 package. The diodes structure, Package SOT-227 and its life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage V 200 V R Continuous forward current per diode I T = 137 C 40 F C A Single pulse forward current per diode I T = 25 C 280 FSM C Maximum power dissipation per module P T = 137 C 76 W D C RMS isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL Operating junction and storage temperatures T , T -55 to +175 C J Stg Revision: 18-Sep-2018 Document Number: 93607 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-UFB80FA20 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage V I = 100 A 200 - - BR R I = 30 A - 0.96 1.08 V F Forward voltage V FM I = 30 A, T = 175 C - 0.77 0.89 F J V = V rated - - 50 A R R Reverse leakage current I RM T = 175 C, V = V rated - - 1 mA J R R Junction capacitance C V = 200 V - 119 - pF T R DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 27 - F F R Reverse recovery time t T = 25 C -34 - ns rr J T = 125 C - 53 - J I = 30 A F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7.0 - J V = 100 V R T = 25 C - 53 - J Reverse recovery charge Q nC rr T = 125 C - 184 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Junction to case, single leg conducting -- 1 R thJC Junction to case, both leg conducting - - 0.5 C/W Case to heatsink R Flat, greased surface - 0.10 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Mounting torque Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) Case style SOT-227 Revision: 18-Sep-2018 Document Number: 93607 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000