VS-VSKDU300/06PbF www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Diodes, 300 A (INT-A-PAK Power Modules) FEATURES Electrically insulated by DBC ceramic 3500 V isolating voltage RMS Standard JEDEC package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL approved file E78996 Case style INT-A-PAK INT-A-PAK Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 600 V R I at T 300 A at 48 C F(AV) C Package INT-A-PAK Circuit configuration Two diodes doubler circuit ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Cathode to anode voltage V 600 V R T = 25 C 435 C Continuous forward current per leg I F T = 100 C 230 A C Single pulse forward current I Limited by junction temperature TBD FSM T = 25 C 781 C Maximum power dissipation per leg P W D T = 100 C 313 C Operating junction and storage T , T -40 to +150 C J Stg temperature range 50 Hz, circuit to base, RMS insulation voltage V 3500 V INS all terminals shorted, t = 1 s ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage V I = 500 A 600 - - BR R I = 150 A - 1.23 1.53 F I = 300 A - 1.43 1.96 V F Forward voltage drop per leg V FM I = 150 A, T = 125 C - 1.11 1.29 F J I = 300 A, T = 125 C - 1.39 1.73 F J Maximum reverse leakage current I T = 150 C, V = 600 V - - 50 mA RM J R Revision: 05-Jan-18 Document Number: 94549 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-VSKDU300/06PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS T = 25 C - 130 165 J Reverse recovery time t ns rr T = 125 C - 195 260 J T = 25 C - 11 18 J I = 50 A F Peak recovery current I A rr T = 125 C dI/dt = 200 A/s - 20 30 J V = 400 V (per leg) R T = 25 C - 670 1485 J Reverse recovery charge Q nC rr T = 125 C - 1800 3900 J Peak rate of recovery current dI /dt T = 125 C - - 400 A/s (rec)M J I = 50 A, T = 25 C, dI/dt = 400 A/s, V = 200 V - 0.2 - F J R Softness factor per leg s I = 50 A, T = 125 C, dI/dt = 400 A/s, V = 200 V - 0.22 - F J R THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating T , T -40 to +150 C J Stg and storage temperature range Maximum thermal resistance, R DC operation 0.16 thJC junction to case per leg K/W Typical thermal resistance, R Mounting surface, flat, smooth and greased 0.05 thCS case to heatsink to heatsink A mounting compound is recommended and the Mounting torque should be rechecked after a period of 4 to 6 Nm torque 10 % busbar 3 hours to allow the spread of the compound. 200 g Approximate weight 7.1 oz. Case style INT-A-PAK 1000 100 T = 150 C J 10 T = 150 C J 100 1 T = 25 C J 0.1 10 0.01 T = 25 C J 1 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 200 300 400 500 600 94549 01 V - Forward Voltage Drop (V) 94549 02 V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 05-Jan-18 Document Number: 94549 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (mA) R