VS-VSUD410CW60
www.vishay.com
Vishay Semiconductors
FRED Pt ,
Ultrafast Soft Recovery Diode Module, 400 A
FEATURES
Lug Lug
Ultrafast recovery
terminal terminal
Designed for industrial level
anode 1 anode 2
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
Base common
TO-244
cathode
Reduced RFI and EMI
Higher frequency operation
Reduced snubbing
PRIMARY CHARACTERISTICS
Reduced parts count
I 400 A
F(AV)
V 600 V
R
DESCRIPTION / APPLICATIONS
Q (typical) 5100 nC
rr
FRED Pt diodes are optimized to reduce losses and
t 215 ns
rr
EMI/RFI in high frequency power conditioning systems. The
Type Modules - diode, FRED Pt
softness of the recovery eliminates the need for a snubber in
Package TO-244 most applications. These devices are ideally suited for HF
welding, power converters and other applications wher e
Circuit configuration Two diodes common cathode
switching losses are significant portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V 600 V
R
T = 25 C 572
C
Continuous forward current per diode I T = 85 C 397
F(DC) C
A
T = 137 C 200
C
Single pulse forward current per diode I T = 25 C 3330
FSM C
T = 25 C 789
C
Maximum power dissipation P W
D
T = 137 C 200
C
Operating junction and storage
T , T -40 to +175 C
J Stg
temperatures
ELECTRICAL SPECIFICATIONS PER LEG (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage V I = 100 A 600 - -
BR R
I = 200 A - 1.0 1.2
F
I = 400 A - 1.12 1.37 V
F
Forward voltage V
FM
I = 200 A, T = 175 C - 0.83 1.0
F J
I = 400 A, T = 175 C - 0.98 1.21
F J
Reverse leakage current I T = 175 C, V = V rated - 0.3 3.0 mA
RM J R R
Series inductance L From top of terminal hole to mounting plane - 5 - nH
S
Revision: 18-Dec-2018 Document Number: 93622
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-VSUD410CW60
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
T = 25 C - 215 -
J
Reverse recovery time t ns
rr
T = 150 C - 432 -
J
I = 50 A,
F
T = 25 C - 48 -
J
Peak recovery current I dI /dt = 500 A/s, A
RRM F
T = 150 C - 70 -
J
V = 200 V
R
T = 25 C - 5100 -
J
Reverse recovery charge Q nC
rr
T = 150 C - 15 100 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOLMIN.TYP.MAX.UNITS
per leg - - 0.19
Thermal resistance,
R
thJC
junction to case
per module - - 0.095 C/W
Thermal resistance, case to heatsink R -0.10 -
thCS
-68 - g
Weight
-2.4 - oz.
Mounting torque 30 (3.4) - 40 (4.6)
lbf in
Mounting torque center hole 12 (1.4) - 18 (2.1)
(N m)
Terminal torque 30 (3.4) - 40 (4.6)
Vertical pull - - 80
lbf in
2" lever pull - - 35
Case style TO-244
1000 1000
T = 175 C
J
100
T = 175 C
J
T = 150 C
100
J
10
T = 25 C
J
1
10
0.1
T = 25 C
J
T = 150 C
J
0.01
1
0 100 200 300 400 500 600
1.2 1.4 1.6
0 0.2 0.4 0.6 0.8 1
Reverse Voltage - V (V)
Forward Voltage Drop - V
R
F
Fig. 1 - Typical Forward Voltage Drop vs. Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Instantaneous Forward Current (Per Leg) (Per Leg)
Revision: 18-Dec-2018 Document Number: 93622
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Instaneous Forward Current (A)
Reverse Current - I (A)
R