VT3045CBP, VIT3045CBP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.30 V at I = 5.0 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB TO-262AA Low forward voltage drop, low power losses K High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 T 200 C max. in solar bypass mode application J Material categorization: for definitions of compliance 3 please see www.vishay.com/doc 99912 3 2 2 1 1 VT3045CBP VIT3045CBP TYPICAL APPLICATIONS PIN 1 PIN 2 PIN 1 PIN 2 For use in solar cell junction box as a bypass diode for K PIN 3 PIN 3 CASE protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS MECHANICAL DATA I 2 x 15 A F(AV) Case: TO-220AB, TO-262AA Molding compound meets UL 94 V-0 flammability rating V 45 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 200 A FSM commercial grade V at I = 15 A 0.39 V F F Terminals: Matte tin plated leads, solderable per T max. (AC mode) 150 C OP J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test T max. (DC forward current) 200 C J Polarity: As marked Package TO-220AB, TO-262AA Mounting Torque: 10 in-lbs maximum Diode variation Dual common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT3045CBP VIT3045CBP UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 30 (1) Maximum average forward rectified current (fig. 1) I A F(AV) per diode 15 Peak forward surge current 8.3 ms single half sine-wave I 200 A FSM superimposed on rated load per diode Operating junction and storage temperature range (AC mode) T , T -40 to +150 C OP STG Junction temperature in DC forward current (2) T 200 C J without reverse bias, t 1 h Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 15-Dec-16 Document Number: 89365 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VT3045CBP, VIT3045CBP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOLTYP.MAX.UNIT I = 5 A 0.42 - F I = 7.5 A T = 25 C 0.44 - F A I = 15 A 0.49 0.57 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.30 - F I = 7.5 A T = 125 C 0.33 - F A I = 15 A 0.39 0.48 F T = 25 C - 2000 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 17 50 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT3045CBPVIT3045CBPUNIT per diode 1.6 Typical thermal resistance R C/W JC per device 0.85 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT3045CBP-M3/4W 1.89 4W 50/tube Tube TO-262AA VIT3045CBP-M3/4W 1.45 4W 50/tube Tube Revision: 15-Dec-16 Document Number: 89365 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000