VT6045CBP, VIT6045CBP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.33 V at I = 10 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB TO-262AA Low forward voltage drop, low power losses K High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 T 200 C max. in solar bypass mode application J Material categorization: for definitions of compliance 3 3 please see www.vishay.com/doc 99912 2 2 1 1 VT6045CBP VIT6045CBP TYPICAL APPLICATIONS PIN 1 PIN 2 PIN 1 PIN 2 For use in solar cell junction box as a bypass diode for K PIN 3 PIN 3 CASE protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS MECHANICAL DATA I 2 x 30 A F(AV) Case: TO-220AB, TO-262AA Molding compound meets UL 94 V-0 flammability rating V 45 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 320 A FSM commercial grade V at I = 30 A 0.47 V F F Terminals: Matte tin plated leads, solderable per T max. (AC mode) 150 C OP J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test T max. (DC forward current) 200 C J Polarity: As marked Package TO-220AB, TO-262AA Mounting Torque: 10 in-lbs maximum Diode variation Dual common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT6045CBP VIT6045CBP UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 60 (1) Maximum average forward rectified current (fig. 1) I A F(AV) per diode 30 Peak forward surge current 8.3 ms single half sine-wave I 320 A FSM superimposed on rated load per diode Operating junction and storage temperature range (AC mode) T , T -40 to +150 C OP STG Junction temperature in DC forward current (2) T 200 C J without reverse bias, t 1 h Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 15-Dec-16 Document Number: 89366 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VT6045CBP, VIT6045CBP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOLTYP.MAX.UNIT I = 10 A 0.44 - F I = 15 A T = 25 C 0.47 - F A I = 30 A 0.54 0.64 F (1) Instantaneous forward voltage per diode V V F I = 10 A 0.33 - F I = 15 A T = 125 C 0.37 - F A I = 30 A 0.47 0.56 F T = 25 C - 3000 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 18 50 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT6045CBPVIT6045CBPUNIT per diode 1.5 Typical thermal resistance R C/W JC per device 0.8 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT6045CBP-M3/4W 1.89 4W 50/tube Tube TO-262AA VIT6045CBP-M3/4W 1.45 4W 50/tube Tube Revision: 15-Dec-16 Document Number: 89366 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000