VT60M45C
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.32 V at I = 5 A
F F
FEATURES
TMBS
Trench MOS Schottky technology
TO-220AB
Low forward voltage drop, low power losses
High efficiency operation
Solder dip 275 C max. 10 s, per JESD 22-B106
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
2
TYPICAL APPLICATIONS
1
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
VT60M45C
reverse battery protection.
PIN 1 PIN 2
CASE
PIN 3
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
Base P/N-M3 - halogen-free, RoHS-compliant, and
I 2 x 30 A
F(AV)
commercial grade
V 45 V
RRM
Terminals: matte tin plated leads, solderable per
I 320 A J-STD-002 and JESD 22-B102
FSM
M3 suffix meets JESD 201 class 1A whisker test
V at I = 30 A (T = 125 C) 0.50 V
F F A
Polarity: as marked
T max. 175 C
J
Mounting Torque: 10 in-lbs maximum
Package TO-220AB
Diode variations Common cathode
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL VT60M45C UNIT
Maximum repetitive peak reverse voltage V 45 V
RRM
per device 60
Maximum average forward rectified current (fig. 1) I
F(AV)
per diode 30
A
Peak forward surge current 8.3 ms single half sine-wave
I 320
FSM
superimposed on rated load per diode
Operating junction and storage temperature range T , T -40 to +175 C
J STG
Revision: 09-Nov-17 Document Number: 87782
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT60M45C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER TEST CONDITIONSSYMBOLTYP.MAX.UNIT
I = 5 A 0.45 -
F
I = 15 A T = 25 C 0.51 -
F A
I = 30 A 0.58 0.68
F
(1)
Instantaneous forward voltage per diode V V
F
I = 5 A 0.32 -
F
I = 15 A T = 125 C 0.41 -
F A
I = 30 A 0.50 0.60
F
T = 25 C - 450 A
A
(2)
Reverse current per diode V = 45 V I
R R
T = 125 C 5.4 25 mA
A
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 5 ms
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL VT60M45CUNIT
per diode 1.0
R
JC
(1)
Typical thermal resistance per device 0.7 C/W
(2)
per device R 52
JA
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient dP /dT < 1/R
D J JA
(2)
Free air, without heatsink
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB VT60M45C-M3/4W 1.89 4W 50/tube Tube
RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted)
A
70
22
D = 0.8
o D = 0.5
With heatsink, Rth = 0.7 C/W 20
JC
60
D = 0.3
18
D = 0.2
16
50
D = 1.0
D = 0.1
14
40
12
10
30
8
T
20
6
Free air, without heatsink,
4
10 o
Rth = 52 C/W
JA
D = t /T t
2 p p
0 0
0 25 50 75 100 125 150 175
0 4 8 12 16 20 24 28 32 36
Case Temperature (C) Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
(D = Duty Cycle = 0.5)
Revision: 09-Nov-17 Document Number: 87782
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Average Forward Rectified Current (A)
Average Power Loss (W)