BT139-800G,127 WeEn Semiconductor

BT139-800G 4Q Triac 26 September 2018 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT78 (T0-220AB) plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. 2. Features and benefits High voltage capability Least sensitive gate for highest noise immunity High minimum IGT for guaranteed immunity to gate noise Planar passivated for voltage ruggedness and reliability Triggering in all four quadrants 3. Applications General purpose motor controls General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 99 C Fig. 1 - - 16 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 155 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 170 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - 5 50 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - 8 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - 10 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G+ - 22 100 mA D T T = 25 C Fig. 7 jWeEn Semiconductors BT139-800G 4Q Triac Symbol Parameter Conditions Min Typ Max Unit I holding current V = 12 V T = 25 C Fig. 9 - 6 60 mA H D j V on-state voltage I = 20 A T = 25 C Fig. 10 - 1.2 1.6 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 200 250 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dV /dt rate of change of V = 400 V T = 95 C dI /dt = 7.2 A/ 10 20 - V/s com D j com commutating voltage ms I = 16 A gate open circuit T 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main terminal 2 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT139-800G TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BT139-800G All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 26 September 2018 2 / 13