BT151U-650C,127 WeEn Semiconductor

DISCRETE SEMICONDUCTORS DATA SHEET BT151U series C Thyristors Product specification August 2018WeEn Semiconductors Product specification Thyristors BT151U series C GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT151U- 500C 650C 800C bidirectional blocking voltage V , Repetitive peak off-state 500 650 800 V DRM capability and high thermal cycling V voltages RRM performance. Typical applications I Average on-state current 7.5 7.5 7.5 A T(AV) include motor control, industrial I RMS on-state current 12 12 12 A T(RMS) and domestic lighting, heating and I Non-repetitive peak 100 100 100 A TSM static switching. on-state current PINNING - SOT533, (I-PAK) PIN CONFIGURATION SYMBOL mb PIN DESCRIPTION NUMBER A K 1 cathode G sym037 2 anode 3 gate 1 2 3 IPAK (SOT533) tab anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500C -650C -800C 1 1 V , V Repetitive peak off-state - 500 650 800 V DRM RRM voltages I Average on-state current half sine wave T 104 C - 7.5 A T(AV) mb I RMS on-state current all conduction angles - 12 A T(RMS) I Non-repetitive peak half sine wave T = 25 C prior to TSM j on-state current surge t = 10 ms - 100 A t = 8.3 ms - 110 A 2 2 2 ItI t for fusing t = 10 ms - 50 A s dI /dt Repetitive rate of rise of I = 20 A I = 50 mA - 50 A/s T TM G on-state current after dI /dt = 50 mA/s G triggering I Peak gate current - 2 A GM V Peak reverse gate voltage - 5 V RGM P Peak gate power - 5 W GM P Average gate power over any 20 ms period - 0.5 W G(AV) T Storage temperature -40 150 C stg T Junction temperature - 125 C j 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/s. 1 August 2018 Rev 1.100