BT152-800R,127 WeEn Semiconductor

BT152-800R SCR 5 September 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance. 2. Features and benefits High thermal cycling performance High voltage capability Planar passivated for voltage ruggedness and reliability Very high current surge capability 3. Applications Ignition circuits Motor control Protection circuits e.g. SMPS inrush current Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 800 V RRM voltage I average on-state half sine wave T 103 C Fig. 1 - - 13 A T(AV) mb current I RMS on-state current half sine wave Fig. 2 Fig. 3 - - 20 A T(RMS) I non-repetitive peak on- half sine wave T = 25 C - - 200 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 220 A j(init) t = 8.3 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 7 - 3 32 mA GT D T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 200 300 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit Fig. 12WeEn Semiconductors BT152-800R SCR 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb A K G 2 A anode sym037 3 G gate mb A mounting base connected to anode 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT152-800R TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BT152-800R All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 5 September 2018 2 / 12