Product Information

BT258-600R.127

BT258-600R.127 electronic component of WeEn Semiconductor

Datasheet
Thyristor; 600V; 5A; 8A; 50uA; Package: tube; THT; TO220AB

Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6408 ea
Line Total: USD 0.64

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

BT258-600R.127
WeEn Semiconductor

1 : USD 0.6408
5 : USD 0.3837
25 : USD 0.3377
49 : USD 0.2928
134 : USD 0.2771

     
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The BT258-600R.127 part is an N-channel field-effect transistor (FET) produced by WeEn Semiconductor. It is designed for use in high-efficiency switching applications. The FET has a breakdown voltage (Vds) of 600V and an on-state resistance (RDSon) of 0.127O. It has a maximum continuous gate peak current (Igpp) of 3A and a maximum continuous drain peak current (Idpp) of 27A. It is rated for a junction temperature (Tj) of 175°C and a maximum storage temperature (Tstg) of 200°C. The FET also features an integrated Schottky diode for voltage protection, as well as a built-in soft start circuit for improved reliability and performance.

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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