Product Information

BTA208-800E,127

Name: BTA208-800E,127
Brand: WeEn Semiconductor
SKU: BTA208800E127_2_WeEnSemiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

BTA208-800E,127 electronic component of WeEn Semiconductor

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Triacs THYR AND TRIACS

Manufacturer: WeEn Semiconductor

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

161: USD 0.5249 ea
Line Total: USD 84.51

0 - Global Stock

MOQ: 161 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 22 May to Tue. 28 May MOQ : 161 Multiples : 1 BTA208-800E,127 WeEn Semiconductor	161 : USD 0.5249

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Additional Infomation About Product

BTA208-800E 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package. Thisseries triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers. 2. Features and benefits 3Q technology for improved noise immunity Direct interfacing with low power drivers and logic ICs High commutation capability High voltage capability Planar passivated for voltage ruggedness and reliability Sensitive gate for easy logic level triggering Triggering in three quadrants only 3. Applications Electronic thermostats General purpose motor controls 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 102 C Fig. 1 - - 8 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 65 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 72 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 10 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - - 10 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - - 10 mA D T T = 25 C Fig. 7 jWeEn Semiconductors BTA208-800E 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit I holding current V = 12 V T = 25 C Fig. 9 - - 25 mA H D j V on-state voltage I = 10 A T = 25 C Fig. 10 - - 1.65 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 535 V T = 110 C (V = 67% 60 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 8 A 5 - - A/ms com D j T(RMS) commutating current dV /dt = 10 V/s gate open circuit com Fig. 12 V = 400 V T = 125 C I = 8 A 10 - - A/ms D j T(RMS) dV /dt = 0.1 V/s gate open circuit com 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main terminal 2 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA208-800E TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BTA208-800E All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 2 / 13

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Ween Semiconductor may also be referenced as

WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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