BTA425X-800BTQ WeEn Semiconductor

BTA425X-800BT 3Q Hi-Com Triac 12 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F)full pac plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries B triac will commutate the full RMS current at the maximum rated junction temperature (T = 150 C) without the aid of a snubber. It is used in applications wherehigh j(max) junction operating temperature capabilit is required. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High junction operating temperature capability High voltage capability Isolated mounting base package Least sensitive gate for highest noise immunity Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only 3. Applications Applications subject to high temperature Heating controls High power motor control High power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 63 C Fig. 1 - - 25 A T(RMS) h Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 250 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 275 A j(init) t = 16.7 ms p T junction temperature - - 150 C j Static characteristicsWeEn Semiconductors BTA425X-800BT 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 50 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - - 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - - 50 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 75 mA H D j V on-state voltage I = 35 A T = 25 C Fig. 10 - 1.2 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 150 C (V = 67% 2000 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 150 C I = 25 A 15 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA425X-800BT TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac BTA425X-800BT All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 2 / 13