BTA41-800BQ WeEn Semiconductor

BTA41-800B 4Q Triac Rev.03 - 06 May 2019 Product data sheet 1. General description Planar passivated four quadrant triac in a IITO3P package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This triac will commutate the full RMS current at the maximum rated junction temperature (T = 150 C). It is used in applications wherehigh j(max) junction operating temperature capabilit is required. 2. Features and benefits High current TRIAC Low thermal resistance High junction operating temperature capability (T = 150 C) j(max) High voltage capability Planar passivated for voltage ruggedness and reliability Insulated tab rated at 2500 V rms 3. Applications High current / high surge applications High power / industrial controls -- e.g. heating, motors, lighting 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak off-state 800 V DRM voltage I RMS on-state current full sine wave T 105 C 40 A T(RMS) mb Fig. 1 Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave t = 20 ms T = 25 C 400 A TSM p j(init) state current Fig. 4 Fig. 5 full sine wave t = 16.7 ms T = 25 C 440 A p j(init) T junction temperature 150 C jWeEn Semiconductors BTA41-800B 4Q Triac Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 50 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - - 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - - 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G+ - - 70 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 80 mA H D j V on-state voltage I = 56.6 A T = 25 C Fig. 10 - 1.2 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 750 - - V/s D DM j DM voltage of V ) exponential waveform DRM gate open circuit V = 536 V T = 150 C (V = 67% 500 - - V/s DM j DM of V ) exponential waveform DRM gate open circuit dI /dt rate of change of V = 400 V T = 125 C I = 20A 20 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s gate open circuit com V = 400 V T = 150 C I = 20A 10 - - A/ms D j T(RMS) dV /dt = 20 V/s gate open circuit com 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb n.c. mounting base isolated 1 2 3 IITO3P (SOT1292) 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package name method quantity version issue date BTA41-800B IITO3P BTA41-800BQ Tube 30 SOT1292 21-Jul-2017 7. Marking Table 4. Marking codes Type number Marking codes BTA41-800B BTA41-800B BTA41-800B All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2019. All rights reserved Product data sheet 06 May 2019 2 / 12