WNS40100CQ WeEn Semiconductor

WNS40100C Dual power Schottky diode 19 September 2018 Product data sheet 1. General description Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a TO-220 plastic package. 2. Features and benefits Trench structure High junction temperature up to 150C Low forward conduction voltage Negligible switching losses High efficiency 3. Applications DC to DC converters Freewheeling diode OR-ing diode 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 100 V RRM voltage I average forward = 0.5 T 128 C square-wave - - 20 A F(AV) mb current pulse per diode Fig. 1 Fig. 2 Fig. 3 I average output current = 0.5 T 126 C square-wave - - 40 A O(AV) mb pulse both diodes conducting Static characteristics V forward voltage I = 5 A T = 25 C Fig. 6 per diode - 0.48 - V F F j I = 5 A T = 125 C Fig. 6 per diode - 0.41 - V F j I = 20 A T = 25 C Fig. 6 per diode - 0.71 0.78 V F j I = 20 A T = 125 C Fig. 6 per diode - 0.64 0.71 V F j I reverse current V = 100 V T = 25 C Fig. 7 Fig. 8 - - 50 A R R j per diode V = 100 V T = 125 C Fig. 7 Fig. 8 - - 30 mA R j per diodeWeEn Semiconductors WNS40100C Dual power Schottky diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 A1 A2 2 K cathode K 3 A2 anode 2 sym125 mb K mounting base connected to cathode TO-220E 6. Ordering information Table 3. Ordering information Type number Package Name Description Version WNS40100C TO-220E plastic single-ended package heatsink mounted 1 mounting TO-220E hole 3-lead TO-220AB WNS40100C All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 2 / 11