Product Information

W987D6HBGX7E

W987D6HBGX7E electronic component of Winbond

Datasheet
DRAM Chip Mobile LPSDR SDRAM 128Mbit 8Mx16 1.8V 54-Pin VFBGA

Manufacturer: Winbond
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

16: USD 3.3252 ea
Line Total: USD 53.2

0 - Global Stock
MOQ: 16  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 16
Multiples : 1

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W987D6HBGX7E
Winbond

16 : USD 3.3252
25 : USD 3.0044
50 : USD 2.9243

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Maximum Clock Frequency
Access Time
Brand
Organization
Mounting
Address Bus
Density
Operating Supply Voltage Min
Operating Temp Range
Operating Supply Voltage Max
Supply Current
Rad Hardened
Operating Supply Voltage Typ
Pin Count
Operating Temperature Classification
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W987D6HB / W987D2HB 128Mb Mobile LPSDR Table of Contents- 1. GENERAL DESCRIPTION ............................................................................................................. 4 2. FEATURES ..................................................................................................................................... 4 3. ORDER INFORMATION ................................................................................................................. 4 4. BALL CONFIGURATION ................................................................................................................ 5 4.1 Ball Assignment: LPSDR x16 ........................................................................................ 5 4.2 Ball Assignment: LPSDR x32 ........................................................................................ 6 5. BALL DESCRIPTION ...................................................................................................................... 7 5.1 Signal Description ......................................................................................................... 7 5.2 Addressing Table .......................................................................................................... 8 6. BLOCK DIAGRAM .......................................................................................................................... 9 7. FUNCTIONAL DESCRIPTION ...................................................................................................... 10 7.1 Command Function ..................................................................................................... 10 7.1.1 Table 1. Truth Table (Note (1) and (2)) ............................................................................ 10 7.1.2 Functional Truth Table (See Note 1) ................................................................................ 11 7.1.3 Functional Truth Table for CKE ........................................................................................ 14 7.1.4 Bank Activate Command .................................................................................................. 15 7.1.5 Bank Precharge Command .............................................................................................. 15 7.1.6 Precharge All Command .................................................................................................. 15 7.1.7 Write Command ............................................................................................................... 15 7.1.8 Write with Auto Precharge Command .............................................................................. 15 7.1.9 Read Command ............................................................................................................... 15 7.1.10 Read with Auto Precharge Command .............................................................................. 15 7.1.11 Extended Mode Register Set Command .......................................................................... 16 7.1.12 Mode Register Set Command .......................................................................................... 16 7.1.13 No-Operation Command .................................................................................................. 16 7.1.14 Burst Stop Command ....................................................................................................... 16 7.1.15 Device Deselect Command .............................................................................................. 16 7.1.16 Auto Refresh Command ................................................................................................... 16 7.1.17 Self Refresh Entry Command........................................................................................... 16 7.1.18 Self Refresh Exit Command ............................................................................................. 17 7.1.19 Clock Suspend Mode Entry/Power Down Mode Entry Command .................................... 17 7.1.20 Clock Suspend Mode Exit/Power Down Mode Exit Command ........................................ 17 7.1.21 Data Write/Output Enable, Data Mask/Output Disable Command ................................... 17 8. OPERATION ................................................................................................................................. 17 8.1 Read Operation ........................................................................................................... 17 8.2 Write Operation ........................................................................................................... 18 8.3 Precharge .................................................................................................................... 18 8.3.1 Auto Precharge ................................................................................................................ 18 8.3.2 READ with auto precharge interrupted by a READ (with or without auto precharge) ....... 19 8.3.3 READ with auto precharge interrupted by a WRITE (with or without auto precharge) ..... 19 Publication Release Date: Apr. 21, 2016 Revision: A01-005 - 1 - W987D6HB / W987D2HB 8.3.4 WRITE with auto precharge interrupted by a READ (with or without auto precharge) ..... 20 8.3.5 WRITE with auto precharge interrupted by a WRITE (with or without auto precharge) .... 20 8.4 Burst Termination ........................................................................................................ 21 8.5 Mode Register Operation ............................................................................................ 22 8.5.1 Burst Length field (A2~A0) ............................................................................................... 22 8.5.2 Addressing Mode Select (A3) .......................................................................................... 22 8.5.3 Addressing Sequence for Sequential Mode ..................................................................... 22 8.5.4 Addressing Sequence for Interleave Mode ...................................................................... 23 8.5.5 Addressing Sequence Example (Burst Length = 8 and Input Address is 13) ................... 23 8.5.6 Read Cycle CAS Latency = 3 ........................................................................................... 23 8.5.7 CAS Latency field (A6~A4) .............................................................................................. 24 8.5.8 Mode Register Definition .................................................................................................. 24 8.6 Extended Mode Register Description .......................................................................... 25 8.7 Simplified State Diagram ............................................................................................. 26 9. ELECTRICAL CHARACTERISTICS ............................................................................................. 27 9.1 Absolute Maximum Ratings ......................................................................................... 27 9.2 Operating Conditions ................................................................................................... 27 9.3 Capacitance ................................................................................................................. 27 9.4 DC Characteristics ...................................................................................................... 28 9.5 Automatic Temperature Compensated Self Refresh Current Feature ........................ 28 9.6 AC Characteristics and Operating Condition .............................................................. 29 9.6.1 AC Characteristics ........................................................................................................... 29 9.6.2 AC Test Condition ............................................................................................................ 30 9.6.3 AC Latency Characteristics .............................................................................................. 31 10. CONTROL TIMING WAVEFORMS ...................................................................................... 32 10.1 Command Input Timing ............................................................................................... 32 10.2 Read Timing ................................................................................................................ 33 10.3 Control Timing of Input Data (x16) .............................................................................. 34 10.4 Control Timing of Output Data (x16) ........................................................................... 35 10.5 Control Timing of Input Data (x32) .............................................................................. 36 10.6 Control Timing of Output Data (x32) ........................................................................... 37 10.7 Mode Register Set (MRS) Cycle ................................................................................. 38 10.8 Extended Mode register Set (EMRS) Cycle ................................................................ 39 11. OPERATING TIMING EXAMPLE ......................................................................................... 40 11.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3) .................................... 40 11.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge) ......... 41 11.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3) .................................... 42 11.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge) ......... 43 11.5 Interleaved Bank Write (Burst Length = 8) .................................................................. 44 11.6 Interleaved Bank Write (Burst Length = 8, Auto-precharge) ....................................... 45 11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3) ............................................. 46 11.8 Page Mode Read / Write (Burst Length = 8, CAS Latency = 3) .................................. 47 11.9 Auto-precharge Read (Burst Length = 4, CAS Latency = 3) ....................................... 48 11.10 Auto-precharge Write (Burst Length = 4) .................................................................... 49 11.11 Auto Refresh Cycle ..................................................................................................... 50 Publication Release Date: Apr. 21, 2016 Revision: A01-005 - 2 -

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Winbond Elec
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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