V 1700 V DS I 25C 72 A D C2M0045170D R 45 m DS(on) Silicon Carbide Power MOSFET TM C2M MOSFET Technology N-Channel Enhancement Mode Features Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits TO-247-3 Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Solar Inverters Switch Mode Power Supplies High Voltage DC/DC converters Motor Drive Part Number Package Marking Pulsed Power Applications C2M0045170D TO-247-3 C2M0045170 Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note V = 0 V, I = 100 A V Drain - Source Voltage 1700 V GS D DSmax V Gate - Source Voltage -10/+25 V Absolute maximum values, AC (f >1 Hz) GSmax Gate - Source Voltage -5/+20 V Recommended operational values V GSop 72 Fig. 19 V =20 V, T = 25C GS C Continuous Drain Current A I D 48 V =20 V, T = 100C GS C Pulsed Drain Current 160 A Fig. 22 I Pulse width t limited by T D(pulse) jmax P Power Dissipation 520 W T =25C, T = 150 C Fig. 20 P C J D -40 to T , T Operating Junction and Storage Temperature C J stg +150 T Solder Temperature 260 C 1.6mm (0.063) from case for 10s L 1 Nm Mounting Torque M3 or 6-32 screw M d 8.8 lbf-in 1 C2M0045170D Rev. -, 06-2016 Electrical Characteristics (T = 25C unless other wise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V (BR)DSS Drain-Source Breakdown Voltage 1700 V VGS = 0 V, ID = 100 A 2.0 2.6 4 V V = V , I = 18mA DS GS D V Gate Threshold Voltage Fig. 11 GS(th) 1.8 V V = V , I = 18mA, T = 150 C DS GS D J I Zero Gate Voltage Drain Current 2 100 A V = 1700 V, V = 0 V DSS DS GS IGSS Gate-Source Leakage Current 600 nA VGS = 20 V, VDS = 0 V 45 70 VGS = 20 V, ID = 50 A Fig. R Drain-Source On-State Resistance m DS(on) 4,5,6 90 V = 20 V, I = 50 A, T = 150 C GS D J 21.7 V = 20 V, I = 50 A DS DS g Transconductance S Fig. 7 fs 24.4 V = 20 V, I = 50 A, T = 150 C DS DS J Ciss Input Capacitance 3672 VGS = 0 V Fig. C Output Capacitance 171 oss pF VDS = 1000 V 17,18 C Reverse Transfer Capacitance 6.7 rss f = 1 MHz AC V = 25 mV E C Stored Energy 105 J Fig 16 oss oss V = 1200 V, V = -5/20 V, DS GS E Turn-On Switching Energy (SiC Diode FWD) 2.1 Fig. 26, ON mJ 29b I = 50A, R = 2.5, L= 105 H, D G(ext) E Turn Off Switching Energy (SiC Diode FWD) 0.86 OFF Note 2 T = 150 C, using SiC Diode as FWD J V = 1200 V, V = -5/20 V, DS GS E Turn-On Switching Energy (Body Diode FWD) 4.7 Fig. 26, ON mJ 29a I = 50A, R = 2.5, L= 105 H, D G(ext) E Turn Off Switching Energy (Body Diode FWD) 0.93 OFF Note 2 T = 150 C, using MOSFET as FWD J t Turn-On Delay Time 65 d(on) V = 1200 V, V = -5/20 V DD GS I = 50 A, D t Rise Time 20 Fig. 27, r ns R = 2.5 , Timing relative to V 29 G(ext) DS td(off ) Turn-Off Delay Time 48 Note 2 Inductive load tf Fall Time 18 , R Internal Gate Resistance 1.3 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 44 gs V = 1200 V, V = -5/20 V DS GS Q Gate to Drain Charge 57 nC I = 50 A Fig. 12 gd D Per IEC60747-8-4 pg 21 Qg Total Gate Charge 188 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 4.1 V V = - 5 V, I = 25 A Fig. 8, 9, GS SD V Diode Forward Voltage 10 SD 3.6 V V = - 5 V, I = 25 A, T = 150 C Note 1 GS SD J I Continuous Diode Forward Current 72 A T = 25 C, V = - 5 V Note 1 S C GS t Reverse Recovery Time 70 ns rr V = - 5 V, I = 50 A , V = 1200 V GS SD R Q Reverse Recovery Charge 530 nC Note 1 dif/dt = 1400 A/s rr I Peak Reverse Recovery Current 14 A rrm Note (1): When using SiC Body Diode the maximum recommended V = -5V GS Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 0.22 0.24 Fig. 21 JC C/W R Thermal Resistance from Junction to Ambient 40 JC 2 C2M0045170D Rev. -, 06-2016