TW030N120C,S1F Toshiba

TW030N120C MOSFETs Silicon Carbide N-Channel MOS TW030N120C 1. Applications Switching Voltage Regulators 2. Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: V = -1.35 V (typ.) DSF (3) High voltage: V = 1200 V DSS (4) Low drain-source on-resistance: R = 30 m (typ.) DS(ON) (5) Less susceptible to malfunction due to high threshold voltage: V = 3.0 to 5.0 V (V = 10 V, I = 13 mA) th DS D (6) Enhancement mode. 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-247 Start of commercial production 2022-07 2022 2022-06-15 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TW030N120C 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) a Characteristics Symbol Rating Unit Drain-source voltage V 1200 V DSS Gate-source voltage V +25/-10 GSS Drain current (DC) ( T = 25 ) I 60 A c D Drain current (DC) ( T = 100 ) I 42 c D Drain current (pulsed) ( T = 25 ) I 166 c DP Drain current (pulsed) ( T = 100 ) I 125 c DP Power dissipation ( T = 25 ) P 249 W c D Channel temperature T 175 ch Storage temperature T -55 to 175 stg Mounting torque TOR 0.8 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.602 /W th(ch-c) Channel-to-ambient thermal resistance R 50 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 175 . Note: This transistor is sensitive to electrostatic discharge and should be handled with care. It should be used for switching applications. 2022 2022-06-15 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0