C2M1000170J Silicon Carbide Power MOSFET TM C2M MOSFET Technology N-Channel Enhancement Mode Features Package High blocking voltage with low R DS(on) Easy to parallel and simple to drive Low parasitic inductance TAB Low impedance package Drain Separate driver source pin Ultra-low drain-gate capacitance Halogen-Free, RoHS compliant Fast intrinsic diode with low reverse recovery (Qrr) Wide creepage (~7mm) between drain and source Drain (TAB) Benefits 1 2 3 4 5 6 7 Higher system efficiency G KS S S S S S Smooth switching waveforms Gate (Pin 1) Reduced cooling requirements Minimum gate ringing Driver Power Source Source Increased system reliability (Pin 2) (Pin 3,4,5,6,7) Applications Part Number Package Auxiliary power supplies Switch Mode Power Supplies C2M1000170J TO-263-7 High-voltage capacitive loads Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note Drain - Source Voltage 1700 V V = 0 V, I = 100 A V GS D DSmax V Gate - Source Voltage -10/+25 V Absolute maximum values GSmax V Gate - Source Voltage -5/+20 V Recommended operational values GSop 5.6 Fig. 19 V = 20 V, T = 25C GS C I Continuous Drain Current A D 3.9 V = 20 V, T = 100C GS C I Pulsed Drain Current 15 A Fig. 22 D(pulse) Pulse width t limited by T jmax P Power Dissipation 60 W T =25C, T = 150 C Fig. 20 P C J D -55 to T , T Operating Junction and Storage Temperature C J stg +150 Solder Temperature 260 C 1.6mm (0.063) from case for 10s T L 1 C2M1000170J Rev. 3, 09-2021Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 1700 V V = 0 V, I = 100 A (BR)DSS GS D 2.0 2.6 4 V = V , I = 0.5 mA V DS GS D VGS(th) Gate Threshold Voltage Fig. 11 2.1 V VDS = VGS, ID = 0.5 mA, TJ = 150 C I Zero Gate Voltage Drain Current 1 100 A V = 1.7 kV, V = 0 V DSS DS GS I Gate-Source Leakage Current 10 250 nA V = 20 V, V = 0 V GSS GS DS 0.8 1.4 V = 20 V, I = 2 A GS D R Drain-Source On-State Resistance Fig. 4,5,6 DS(on) 1.4 VGS = 20 V, ID = 2 A, TJ = 150 C 1.04 VDS= 20 V, IDS= 2 A gfs Transconductance S Fig. 7 1.09 VDS= 20 V, IDS= 2 A, TJ = 150 C C Input Capacitance 215 iss V = 0 V GS Coss Output Capacitance 19 pF Fig. 17,18 V = 1000 V DS Crss Reverse Transfer Capacitance 2.2 f = 1 MHz VAC = 25 mV E C Stored Energy 10.2 J Fig 16 oss oss E Turn-On Switching Energy 53 ON V = 1.2 kV, V = -5/20 V, I = 2 A, DS GS D J Fig. 26 R = 2.5 , L= 1478 H, T = 150 C J E Turn Off Switching Energy 12 G(ext) OFF t Turn-On Delay Time 4.2 d(on) V = 1.2 kV, V = -5/20 V DD GS t Rise Time 6.5 r I = 2 A, R = 2.5 , R = 600 D G(ext) L ns Fig. 27 Timing relative to V DS td(off) Turn-Off Delay Time 12.6 Per IEC60747-8-4 pg 83 tf Fall Time 47.6 , R Internal Gate Resistance 27 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 5 gs V = 1.2 kV, V = -5/20 V DS GS Q Gate to Drain Charge 5 I = 2 A gd nC D Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 13 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 3.8 V V = - 5 V, I = 1 A, T = 25 C GS SD J Fig. 8, 9, VSD Diode Forward Voltage 10 3.3 V V = - 5 V, I = 1 A, T = 150 C GS SD J I Continuous Diode Forward Current 5.6 A T = 25 C S C t Reverse Recovery Time 15 ns V = - 5 V, I = 2 A T = 25 C rr GS SD J V = 1.2 kV R Q Reverse Recovery Charge 31 nC rr dif/dt = 2390 A/s I Peak Reverse Recovery Current 6 A rrm Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 1.96 2.06 JC C/W Fig. 21 RJC Thermal Resistance from Junction to Ambient 40 2 C2M1000170J Rev. 3, 09-2021