C3D06065E V = 650 V V = 650 V RRM RRM Silicon Carbide Schottky Diode I (T =135C) = 9.5 A I T <135C = 8.6 A C F C F Z -Rec Rectifier Q = 15 nC Q = nC c c Features Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F TO-252-2 Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements PIN 1 Parallel Devices Without Thermal Runaway CASE PIN 2 Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages C3D06065E TO-252-2 C3D06065 Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (T = 25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 650 V RRM V Surge Peak Reverse Voltage 650 V RSM V DC Blocking Voltage 650 V DC 20 T =25C C I Continuous Forward Current 9.5 A T =135C Fig. 3 F C 6 T =157C C 28 T =25C, t = 10 ms, Half Sine Wave C P I Repetitive Peak Forward Surge Current A FRM 19 T =110C, t = 10 ms, Half Sine Wave C P 63 T =25C, t = 10 ms, Half Sine Wave C p I Non-Repetitive Peak Forward Surge Current A Fig. 8 FSM 49 T =110C, t = 10 ms, Half Sine Wave C p 540 T =25C, t = 10 s, Pulse C P I Non-Repetitive Peak Forward Surge Current A Fig. 8 F,Max 460 T =110C, t = 10 s, Pulse C P 100 T =25C C P Power Dissipation W Fig. 4 tot 43 T =110C C -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 C3D06065E Rev. A, 01-2016Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.7 I = 6 A T =25C F J V Forward Voltage V Fig. 1 F 2.0 2.4 I = 6 A T =175C F J 8 40 V = 650 V T =25C R J I Reverse Current A Fig. 2 R 15.5 160 V = 650 V T =175C R J V = 400 V, I = 6 A R F Q Total Capacitive Charge 15 nC di/dt = 500 A/s Fig. 5 C T = 25C J 295 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 28.5 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6 R J 25.5 V = 400 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 2.3 J V = 400 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 1.5 C/W Fig. 9 JC Typical Performance 20 14 T = -55 C J 12 16 T = 25 C J 10 = 75 C T J T = 175 C J 12 8 T = 125 C J T = 125 C J T = 175 C J T = 75 C 6 J 8 TT = = 25 25 CC J 4 T = -55 C J 4 2 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 100 200 300 400 500 600 700 800 900 1000 0 200 400 600 800 1000 1200 Foward Voltage, V (V) V (V) Reverse VVo (V)ltage, V (V) F R F R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C3D06065E Rev. A, 01-2016 FFoowwaarrdd CCurrurrenentt,, II (A) F I (A) F RReeveverrssee LLeaeakkaagge e CCuurrrrenentt,, II (mA) RR I (mA) R