C3D08065A V = 650 V RRM Silicon Carbide Schottky Diode I (T =135C) = 11 A C F Z -Rec Rectifier Q = 20 nC c Features Package 650-Volt Schottky Rectifier Zero Reverse Recover y Current Zero For ward Recover y Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F TO-220-2 Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements PIN 1 CASE Parallel Devices WithoutThermal Runaway PIN 2 Applications Part Number Package Marking Switch Mode Power Supplies Power Factor Correction C3D08065A TO-220-2 C3D08065 Motor Drives Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 650 V RRM V Surge Peak Reverse Voltage 650 V RSM V DC Blocking Voltage 650 V DC 24 T =25C C I Continuous For ward Current 11 A T =135C Fig. 3 F C 8 T =152C C 37.5 T =25C, t = 10 ms, Half Sine Wave C P I Repetitive Peak For ward Surge Current A FRM 25.5 T =110C, t = 10 ms, Half Sine Wave C P 71 T =25C, t = 10 ms, Half Sine Wave C p I Non-Repetitive Peak For ward Surge Current A Fig. 8 FSM 60 T =110C, t = 10 ms, Half Sine Wave C p 650 T =25C, t = 10 s, Pulse C P I Non-Repetitive Peak For ward Surge Current A Fig. 8 F,Max 530 T =110C, t = 10 s, Pulse C P 107 T =25C C P Power Dissipation W Fig. 4 tot 46.5 T =110C C -55 to T , T Operating Junction and StorageTemper ature C J stg +175 1 Nm M3 Screw TO-220 Mounting Torque 6-32 Screw 8.8 lbf-in 1 C3D08065A Rev. C, 12-2015Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 8 A T =25C F J V For ward Voltage V Fig. 1 F 2.1 2.4 I = 8 A T =175C F J 10 51 V = 650 V T =25C R J I Reverse Current A Fig. 2 R 12 204 V = 650 V T =175C R J V = 650 V, I = 8A R F Q Total Capacitive Charge 20 nC di /dt = 500 A/s Fig. 5 C T = 25C J 395 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 37 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6 R J 32 V = 400 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 3.0 J V = 400 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recover y charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 1.4 C/W Fig. 9 JC Typical Performance 20 30 18 T = -55 C J 25 16 T = 25 C J 14 T = 75 C J 20 T = 175 C J 12 T = 125 C J T = 125 C J 10 15 T = 175 C J T = 75 C J 8 TT = = 25 25 CC 1100 J 6 T = -55 C J 4 5 2 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 100 200 300 400 500 600 700 800 900 1000 0 200 400 600 800 1000 1200 Foward Voltage, V (V) V (V) Reverse VVo (V)ltage, V (V) F R F R Figure 1. For ward Characteristics Figure 2. Reverse Characteristics 2 C3D08065A Rev. C, 12-2015 FFoowwaarrdd CCuurrrrenentt,, II (A) I (A) F F RReeveverrssee LLeaeakkaagge e CCuurrrrenentt,, II (mA) RR I ( mA) R