C3D10170H Wolfspeed

C3D10170H electronic component of Wolfspeed
C3D10170H Wolfspeed
C3D10170H SiC Schottky Diodes
C3D10170H  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of C3D10170H SiC Schottky Diodes across the USA, India, Europe, Australia, and various other global locations. C3D10170H SiC Schottky Diodes are a product manufactured by Wolfspeed. We provide cost-effective solutions for SiC Schottky Diodes, ensuring timely deliveries around the world.

Part No. C3D10170H
Manufacturer: Wolfspeed
Category: SiC Schottky Diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 231W; TO247-2
Datasheet: C3D10170H Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 13.5463
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 14.4555
100$ 13.8669
1000$ 13.5252
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 26.1207
2$ 24.696
N/A

Obsolete

Availability 0
MOQ : 4
Multiples : 1
QtyUnit Price
4$ 19.0658
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Package / Case
Product
Technology
Type
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Trr - Reverse Recovery Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the C3D10170H from our SiC Schottky Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the C3D10170H and other electronic components in the SiC Schottky Diodes category and beyond.

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C3D10170HSilicon Carbide Schottky Diode V = 1700 V RRM Z -Rec RectifieR I T <135C = 14.4 A C F Q = 96 nC c Features Package 1700-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Halogen-Free RoHS Compliant TO-247-2 Benefits PIN 1 CASE Replace Bipolar with Unipolar Rectifiers PIN 2 Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Part Number Package Marking Parallel Devices Without Thermal Runaway C3D10170H TO-247-2 C3D10170 Maximum Ratings Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 1700 V RRM V Surge Peak Reverse Voltage 1700 V RSM V DC Blocking Voltage 1700 V DC I Continuous Forward Current 14.4 A T <135C F C 45 T =25C, t =10 ms, Half Sine Wave, D=1 C P I Repetitive Peak Forward Surge Current A FRM 26 T =110C, t =10 ms, Half Sine Wave, D=1 C P Non-Repetitive Peak Forward Surge 55 T =25C, t =10ms, Half Sine Wave, D=1 C P I A FSM Current 41 T =110C, t =10 ms, Half Sine Wave, D=1 C P 231 T =25C C P Power Dissipation W tot 100 T =110C C T Maximum Case Temperature 135 C c -55 to T Operating Junction Range C J +175 -55 to T Storage Temperature Range C stg +135 1 Nm M3 Screw TO-247 Mounting Torque 8.8 lbf-in 6-32 Screw Subject to change without notice. 1 www.cree.com/power Datasheet: C3D10170H Rev. - Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.7 2 I = 10 A T =25C F J V Forward Voltage V F 3 3.5 I = 10 A T =175C F J 20 60 V = 1700 V T =25C R J I Reverse Current A R 100 300 V = 1700 V T =175C R J V = 1700 V, I = 10 A R F Q Total Capacitive Charge 96 nC d i/d t = 200 A/s C T = 25C J 827 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 78 pF V = 200 V, T = 25C, f = 1 MHz R J 41 V = 800 V, T = 25C, f = 1 MHz R J Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit R Thermal Resistance from Junction to Case 0.65 C/W JC Typical Performance 5 20 18 16 4 14 12 3 T =-55C J T = 25C J T = 75C 10 J T =125C T =-55C J J T =175C T = 25C J J 8 2 T = 75C J T =125C J T =175C J 6 4 1 2 0 0 0 1 2 3 4 5 6 7 0 250 500 750 1000 1250 1500 1750 2000 2250 V (V) R V (V) F Figure 2. Reverse Characteristics Figure 1. Forward Characteristics 2 C3D10170H Rev. - I (A) F I (A) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Wolfspeed / Cree
Wolfspeed(CREE)
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