C3D20060D V = 600 V RRM Silicon Carbide Schottky Diode I (T =135C) = 26 A** C F Z -Rec Rectifier Q = 48 nC** c Features Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F TO-247-3 Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Switch Mode Power Supplies (SMPS) Part Number Package Marking Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages C3D20060D TO-247-3 C3D20060 AC/DC converters Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 600 V RRM V Surge Peak Reverse Voltage 600 V RSM V DC Blocking Voltage 600 V DC 27.5/55 T =25C C Continuous Forward Current I 13/26 A T =135C Fig. 3 F C (Per Leg/Device) 10/20 T =149C C 46* T =25C, t = 10 ms, Half Sine Wave C P I Repetitive Peak Forward Surge Current A FRM 31* T =110C, t =10 ms, Half Sine Wave C P 90* T =25C, t = 10 ms, Half Sine Wave C p I Non-Repetitive Peak Forward Surge Current A Fig. 8 FSM 71* T =110C, t = 10 ms, Half Sine Wave C p 860* T =25C, t = 10 s, Pulse C P I Non-Repetitive Peak Forward Surge Current A Fig. 8 FSM 680* T =110C, t = 10 s, Pulse C P 136.5 T =25C C P Power Dissipation (Per Leg/Device) W Fig. 4 tot 59 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-650V R -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 Nm M3 Screw TO-247 Mounting Torque 8.8 lbf-in 6-32 Screw * ** Per Leg, Per Device 1 C3D20060D Rev. E, 03-2016Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 10 A T =25C F J V Forward Voltage V Fig. 1 F 2.0 2.4 I = 10 A T =175C F J 10 50 V = 600 V T =25C R J I Reverse Current A Fig. 2 R 20 200 V = 600 V T =175C R J V = 400 V, I = 10 A R F Q Total Capacitive Charge 24 nC di /dt = 500 A/s Fig. 5 C T = 25C J 460.5 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 44 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6 R J 40 V = 400 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 3.6 J V = 400 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note ** 1.3 R Thermal Resistance from Junction to Case C/W Fig. 9 * JC 0.65 ** * Per Leg, Both Legs Typical Performance (Per Leg) 100 30 90 T = -55 C J 25 80 T = 25 C J 70 20 T = 75 C J T = 175 C J 60 T = 125 C J T = 125 C J 15 50 T = 175 C J T = 75 C J 40 1010 TT == 25 25 CC J 30 T = -55 C J 20 5 10 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 100 200 300 400 500 600 700 800 900 1000 0 200 400 600 800 1000 1200 Foward Voltage, V (V) Reverse Voltage, V (V) V (V) V (V) F R F R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C3D20060D Rev. E, 03-2016 FFoowwaarrdd CCurrurrenentt,, II (A) I (A) F F RReevveerrssee LLeeaakkaaggee CuCurrrreenntt,, II (mA) RR I ( mA) R