C3D30065D
V = 650 V
RRM
Silicon Carbide Schottky Diode
**
I (T =135C) = 36 A
F C
Z -Rec Rectifier
**
Q = 89 nC
c
Features Package
650 Volt Schottky Rectifier
Zero Reverse Recover y Current
Zero For ward Recover y Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on V
F
TO-247-3
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices WithoutThermal Runaway
Part Number Package Marking
Applications
C3D30065D C3D30065
TO-247-3
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inver ter stages
AC/DC conver ters
Maximum Ratings (T =25C unless other wise specified)
C
Symbol Parameter Value Test Conditions Note
V Repetitive Peak Reverse Voltage 650 V
RRM
V Surge Peak Reverse Voltage 650 V
RSM
V DC Blocking Voltage 650 V
DC
39/78 T =25C
C
Continuous For ward Current
I 18/36 A T =135C Fig. 3
F C
(Per Leg/Device)
15/30 T =145C
C
66* T =25C, t =10 ms, Half Sine Pulse
C P
I Repetitive Peak For ward Surge Current A
FRM
46* T -110C, t =10 ms, Half Sine Pulse
C P
162 T =25C, t =10 ms, Half Sine Pulse
C P
I Non-Repetitive Peak For ward Surge Current A Fig. 8
FSM
150 T =110C, t =10 ms, Half Sine Pulse
C P
1400 T =25C, t =10 m s, Pulse
C P
I Non-Repetitive Peak For ward Current A Fig. 8
F,Max
1200 T =110C, t =10 m s, Pulse
C P
150 T =25C
C
P Power Dissipation(Per Leg/Device) W Fig. 4
tot
65 T =110C
C
dV/dt Diode dV/dt ruggedness 200 V/ns V =0-600V
R
131* T =25C, t =10 ms
2 2 2
C P
i dt i t value A s
112.5* T =110C, t =10 ms
C P
T , T Operating Junction and StorageTemper ature -55 to +175 C
J stg
1 Nm
M3 Screw
TO-247 Mounting Torque
8.8 lbf-in 6-32 Screw
* **
Per Leg, Per Device
C3D30065D Rev. -, 09-2016
1Electrical Characteristics (Per Leg)
Symbol Parameter Typ. Max. Unit Test Conditions Note
1.45 1.8 I = 16 A T =25C
F J
V For ward Voltage V Fig. 1
F
2.0 2.4 I = 16 A T =175C
F J
18.5 95 V = 650 V T =25C
R J
I Reverse Current A Fig. 2
R
38.5 378 V = 650 V T =175C
R J
V = 400 V, I = 16 A
R F
Q Total Capacitive Charge 44.5 nC di /dt = 500 A/s Fig. 5
C
T = 25C
J
877.5 V = 0 V, T = 25C, f = 1 MHz
R J
C Total Capacitance 80 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6
R J
64 V = 400 V, T = 25C, f = 1 MHz
R J
E Capacitance Stored Energy 6.2 J V = 400 V Fig. 7
C R
Note:This is a majority carrier diode, so there is no reverse recover y charge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
1*
R Thermal Resistance from Junction to Case C/W Fig. 9
JC
0.5**
* **
Per Leg, Per Device
Typical Performance (Per Leg)
30
45
40
T = -55 C
J
25
35
T = 25 C
J
30 T = 75 C
20
J
T = 175 C
J
T = 125 C
25
J
T = 125 C
J
15
T = 175 C
J
20
T = 75 C
J
1515
1100 TT = = 25 25 CC
J
10 T = -55 C
J
5
5
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0 100 200 300 400 500 600 700 800 900
Foward Voltage, V (V)
V (V) V (V)
F Reverse Voltage, V (V)
F R
R
Figure 1. For ward Characteristics Figure 2. Reverse Characteristics
C3D30065D Rev. -, 09-2016
2
FFoowwaarrdd CCururrrenentt,, II (A)
I (A) F
F
RReveveerrssee LLeeaakkaaggee CCuurrrreenntt,, II (uA)
RR
I (A)
R