C6D06065Q-TR Wolfspeed

C6D06065Q 6th Generation 650 V, 6 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide Package Types: QFN 8x8 lower overall system costs in a variety of diverse applications. Marking: C6D06065Q Features Applications Low Forward Voltage (V ) Drop with Positive Enterprise Power, Server, & Telecom F Temperature Coefficient Power Supplies Zero Reverse Recovery Current / Forward Switched Mode Power Supplies Recovery Voltage Industrial Power Supplies Temperature-Independent Switching Behavior Boost Power Factor Correction Low Profile Package with Low Inductance Bootstrap Diode LLC Clamping Maximum Ratings (T = 25C Unless Otherwise Specified) C Parameter Symbol Value Unit Test Conditions Notes Repetitive Peak Reverse Voltage V 650 RRM V DC Blocking Voltage V 650 DC 21 T = 25 C J Continuous Forward Current I 11 T = 125 C Fig. 3 F J 6 A T = 155 C J 48 T = 25 C, t = 10 ms, Half Sine Wave Non-Repetitive Peak Forward C p I FSM Surge Current 42 T = 110 C, t = 10 ms, Half Sine Wave C p 62 T = 25 C J Power Dissipation P W Fig. 4 tot 27 T = 110 C J 11 T = 25 C, t = 10 ms C p 2 2 2 i t Value i t A s 8 T = 110 C, t = 10 ms C p Rev. 0, DECEMBER 2021 4600 Silicon Drive Durham, NC 27703 Tel: +1.919.313.5300 wolfspeed.com/power 2021 Wolfspeed, Inc. All rights reserved. Wolfspeed and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice.C6D06065Q 2 Electrical Characteristics Parameter Symbol Typ. Max. Unit Test Conditions Notes 1.27 1.5 I = 6 A, T = 25 C F j Forward Voltage V V Fig. 1 F 1.37 1.6 I = 6 A, T = 175 C F j 2 20 V = 650 V, T = 25 C R j Reverse Current I A Fig. 2 R 25 200 V = 650 V, T = 175 C R j Total Capacitive Charge Q 22 nC V = 400 V, T = 25 C Fig. 5 C R j 393 V = 0 V, T = 25 C, f = 1 MHz R j Total Capacitance C 44 pF V = 200 V, T = 25 C, f = 1 MHz Fig. 6 R j 36 V = 400 V, T = 25 C, f = 1 MHz R j Capacitance Stored Energy E 3.5 J V = 400 V Fig. 7 c R Notes: SiC Schottky Diodes are majority carrier devices, so there is no reverse recovery charge. Thermal & Mechanical Characteristics Parameter Symbol Value Unit Notes Thermal Resistance, Junction to Case (Typ.) R 2.4 C / W , JC Junction Temperature T -55 to +175 j Case & Storage Temperature T -55 to +150 C c Maximum Processing Temperature T 325 10 min max. PROC Electrostatic Discharge (ESD) Classifications Parameter Symbol Notes Human Body Model HBM Class 3B (Class 3B ( 8000 V) 8000 V) Charge Device Model CDM Class C3 (Class C3 ( 1000 V) 1000 V) Rev. 0, December 2021 4600 Silicon Drive Durham, NC 27703 Tel: +1.919.313.5300 wolfspeed.com/power 2021 Wolfspeed, Inc. All rights reserved. Wolfspeed and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice.