C6D10065E V = 650 V RRM Silicon Carbide Schottky Diode I (T =155C) = 10 A F C Z -Rec Rectifier Q = 34 nC c Features Package th New 6 Generation Technology Low Forward Voltage Drop (V ) F Zero Reverse Recovery Current Zero Forward Recovery Voltage Low Leakage Current (I ) r Temperature-Independent Switching Behavior Positive Temperature Coefficient on V F TO-252-2 Benefits Higher System Level Efficiency Increase System Power Density PIN 1 Reduction of Heat Sink Requirements CASE PIN 2 Parallel Devices Without Thermal Runaway Applications Switch Mode Power Supplies (SMPS) Part Number Package Marking Server/Telecom Power Supplies Industrial Power Supplies C6D10065E TO-252-2 C6D10065 Solar UPS Maximum Ratings (T = 25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 650 V RRM V DC Blocking Voltage 650 V DC 35 T =25C C I Continuous Forward Current 18 A T =125C Fig. 3 F C 10 T =155C C 41 T =25C, t = 10 ms, Half Sine Wave C P I Repetitive Peak Forward Surge Current A FRM 24 T =110C, t = 10 ms, Half Sine Wave C P 78 T =25C, t = 10 ms, Half Sine Wave C P I Non-Repetitive Peak Forward Surge Current A Fig. 8 FSM 68 T =110C, t = 10 ms, Half Sine Wave C P 1100 T =25C, t = 10 s, Pulse C P I Non-Repetitive Peak Forward Surge Current A Fig. 8 F,Max 1000 T =110C, t = 10 s, Pulse C P 99 T =25C C P Power Dissipation Fig. 4 W tot 43 T =110C C -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 C6D10065E Rev. A, 05-2020Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.27 1.50 I = 10 A T =25C F J V Forward Voltage V Fig. 1 F 1.37 1.60 I = 10 A T =175C F J 2 50 V = 650 V T =25C R J I Reverse Current A Fig. 2 R 15 200 V = 650 V T =175C R J Q Total Capacitive Charge 34 nC V = 400 V, T = 25C Fig. 5 C R J 611 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 67 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6 R J 53 V = 400 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 5.2 J V = 400 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 1.51 C/W Fig. 9 JC Typical Performance 100 20 18 T = -55C J T = 25C J 16 80 T = 75C J T = 125C J 14 T = 175C J 12 60 T = 175 C J 10 T = 125 C J 8 40 T = 75 C J 6 T = 25 C J 4 20 T = -55 C J 2 0 0 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 100 200 300 400 500 600 700 800 Foward Voltage, V (V) V (V) V (V) F Reverse Voltage, V (V) V (V) VR (V) F R F R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C6D10065E Rev. A, 05-2020 Foward Current, I (A) F II (A) (A) F F Reverse Leakage Current, I (uA) RR I ( mA) I ( mA) R R