CGD15HB62LP

CGD15HB62LP V +18/-5 V Drive I 14 A G Dual Channel Differential Isolated Gate Driver R 5 G Cree CAS325M12HM2 C2M SiC Half Bridge Module Optimized Features Package Optimized for Crees High Performance CAS325M12HM2 Half Bridge Power Modules High-Frequency, Ultra-Fast Switching Operation On Board 3 W or 6 W Isolated Power Supplies Configurable UVLO with Hysteresis Direct Mount Low Inductance Design On-Board Overcurrent, Overlap, and Reverse Polarity Protection Differential Inputs for Increased Noise Immunity Differential to Single-Ended Daughter Board Available Upon Request For Use with Cree Module CAS325M12HM2, 1200 V, 325 A Module Half Bridge CPM2 Variants for Module Junction Part Number Package Marking Temperatures up to 175 C CGD15HB62LP PCBA CGD15HB62LP V3 Applications DC Bus Voltages up to 1000 V Maximum Ratings Symbol Parameter Value Unit Test Conditions V Supply Voltage -0.5 to 18 DC V V Logic Level Inputs -0.5 to 5.5 I I Output Peak Current 14 O A T = 25 C A I Output Average Current 4 O(avg) F Maximum Switching Frequency 115 kHz 3 W Power Supply + CAS325M12HM2 max T Ambient Operating Temperature -50 to 95 op C T Storage Temperature -50 to 125 stg 1 CGD15HB62LP Rev. A, 07-2016 Gate Driver Electrical Characterization Symbol Parameter Min. Typ. Max. Unit Test Conditions V Supply Voltage 9 12 18 DC Secondary UVLO Inactive Level +13.5 +14 +14.5 V Secondary UVLO Active Level +11.2 +12 +12.7 UVLO Secondary UVLO Hysteresis 2 V V High Level Logic Input Voltage 3.5 5.5 IH Single-Ended Inputs V Low Level Logic Input Voltage 0 1.5 IL Differential Input Common Mode V -7 - +12 Differential Inputs IDCM Range Differential Input Threshold V -200 -125 -50 mV V = V V IDTH ID Pos-Line Neg-Line Voltage V Differential Output High Level 2.2 3.4 I = -20 mA ODH OD V Differential Output Low Level 0.2 0.4 I = 20 mA ODL OD V Differential Output Magnitude 2 3.1 R =100 OD L V V High Level Output Voltage +18 GATE,HIGH V Low Level Output Voltage -5 GATE,LOW V Working Isolation Voltage 1500 V IOWM RMS C Isolation Capacitance 17 pF Per Channel ISO Common Mode Transient CMTI 100 kV/s Immunity 1 R Output Resistance 0.4 1.5 GIC-ON Gate Drive IC 1 R Output Resistance 0.3 1.2 GIC-OFF 2 R External Output Resistance 4.99 GEXT-ON External SMD Resistor 2 R 4.99 GEXT-OFF External Output Resistance D Turn-off Diode Forward Voltage 0.62 0.67 0.82 V VF-OFF t Output Rise Time 250 ON C = 19 nF Load From 10% to 90% t Output Fall Time 140 OFF ns t Propagation Delay 75 PHL/PLH Over-current Propagation Delay to Does Not Include t 40 PD FAULT Signal Low Blanking 3 R Soft-Shutdown Resistance 30.1 SS Output pulled low t Output Fall Time Soft-Shutdown 1.5 s OFF-SS through R SS 1 Output resistance of totem pole IC 2 Additional output resistance is added with SMD resistors. A diode is provided to allow control of turn-off separately. The diode makes the effective turn-off resistance be the parallel combination of the RGEXT-ON and RGEXT-OFF while the turn-on effective resistance is RGEXT-ON. Standard value is 4.99 for both turn-on and turn-off. See Figure 1 for configuration. 3 Soft-Shutdown Resistor will safely turn off the Gate in the event an over-current is detected by the Desaturation Protection circuit. 2 CGD15HB62LP Rev. A, 07-2016