Product Information

CGHV27030S

CGHV27030S electronic component of Wolfspeed

Datasheet
RF JFET Transistors DC-6GHz 30W GaN GaN HEMT

Manufacturer: Wolfspeed
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 74.6676 ea
Line Total: USD 74.6676

51 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
125 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

Stock Image

CGHV27030S
Wolfspeed

1 : USD 68.8275
10 : USD 64.768
25 : USD 62.767
50 : USD 61.5595
100 : USD 60.5245
250 : USD 60.5245
500 : USD 60.122
1000 : USD 60.1105
2500 : USD 59.5125

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Application
Configuration
Operating Temperature Range
Brand
Factory Pack Quantity :
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
CGHV27030S-AMP1 electronic component of Wolfspeed CGHV27030S-AMP1

RF Development Tools 50V Eval Board ForPN 941-CGHV27030S
Stock : 0

CGHV27030S-AMP2 electronic component of Wolfspeed CGHV27030S-AMP2

RF Development Tools 28V Eval Board ForPN 941-CGHV27030S
Stock : 2

CGHV27030S-AMP3 electronic component of Wolfspeed CGHV27030S-AMP3

RF Development Tools 28V Eval Board ForPN 941-CGHV27030S
Stock : 1

CGHV27060MP electronic component of Wolfspeed CGHV27060MP

RF JFET Transistors DC-2.7GHz 60 Watt 50V Gain 18.5dB GaN
Stock : 22

CGHV40030F electronic component of Wolfspeed CGHV40030F

RF JFET Transistors DC-6GHz 30W GaN Gain 16dB typ.
Stock : 83

CGHV27030S-AMP4 electronic component of Wolfspeed CGHV27030S-AMP4

RF Development Tools 50V Eval Board ForPN 941-CGHV27030S
Stock : 0

CGHV27060MP-AMP1 electronic component of Wolfspeed CGHV27060MP-AMP1

RF Development Tools DC-2.7GHz 60 Watt Eval Board W/O Tran.
Stock : 3

CGHV35150F electronic component of Wolfspeed CGHV35150F

RF JFET Transistors 2.9-3.5GHz 150W GaN Gain@3.1Ghz 13.3dB
Stock : 0

CGHV35150-TB electronic component of Wolfspeed CGHV35150-TB

RF Development Tools 2.9-3.5GHz 150W GaN Test Board
Stock : 1

CGHV27030S-AMP5 electronic component of Wolfspeed CGHV27030S-AMP5

RF Development Tools Test Board with GaN HEMT
Stock : 0

Image Description
CGHV27060MP electronic component of Wolfspeed CGHV27060MP

RF JFET Transistors DC-2.7GHz 60 Watt 50V Gain 18.5dB GaN
Stock : 22

CGHV40030F electronic component of Wolfspeed CGHV40030F

RF JFET Transistors DC-6GHz 30W GaN Gain 16dB typ.
Stock : 83

CGHV59350F electronic component of Wolfspeed CGHV59350F

RF JFET Transistors 5.2-5.9GHz 350 Watt Gain typ. 10.5dB GaN
Stock : 0

CGHV60075D5 electronic component of Wolfspeed CGHV60075D5

RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
Stock : 0

CLF1G0060-30U electronic component of NXP CLF1G0060-30U

NXP Semiconductors RF JFET Transistors Broadband RF power GaN HEMT
Stock : 0

CLF1G0060S-10U electronic component of NXP CLF1G0060S-10U

RF JFET Transistors Broadband RF power GaN HEMT
Stock : 0

CLF1G0060S-30U electronic component of NXP CLF1G0060S-30U

RF JFET Transistors Broadband RF power GaN HEMT
Stock : 0

QPD2795 electronic component of Qorvo QPD2795

RF JFET Transistors 2.5-2.7GHz 360W 48V Gain 22dB GaN
Stock : 0

MAGX-000035-01500S electronic component of MACOM MAGX-000035-01500S

MACOM RF JFET Transistors DC-3.5GHz 15Watt 50V Gain 15.5dB Typ.
Stock : 0

MAGX-000035-05000P electronic component of MACOM MAGX-000035-05000P

Trans JFET N-CH 2.5A GaN 14-Pin SMD Bulk
Stock : 0

Package Type: 3x4 DFN PN: CGHV27030S CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V and 28 V operations. The CGHV27030S is also ideal for tactical communications applications operating from 20-2500 MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Typical Performance 2.5-2.7 GHz (T = 25C) , 50 V C Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units Small Signal Gain 22.5 22.0 21.4 dB Adjacent Channel Power @ P =5 W -34.5 -35.0 -34.0 dBc OUT Drain Efficiency @ P = 5 W 28.5 29.5 30.0 % OUT Input Return Loss 8.5 14 14 dB Note: Measured in the CGHV27030S-AMP1 application circuit, under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH. Features for 50 V in CGHV27030S-AMP1 2.5 - 2.7 GHz Operation 30 W Typical Output Power 20 dB Gain at 5 W P AVE -34 dBc ACLR at 5 W P AVE 30% efficiency at 5 W P AVE High degree of APD and DPD correction can be applied Listing of Available Hardware Application Circuits / Demonstration Circuits Application Circuit Operating Frequency Amplifier Class Operating Voltage CGHV27030S-AMP1 2.5 - 2.7 GHz Class A/B 50 V CGHV27030S-AMP2 2.5 - 2.7 GHz Class A/B 28 V CGHV27030S-AMP3 1.8 - 2.2 GHz Class A/B 28 V CGHV27030S-AMP4 1.8 - 2.2 GHz Class A/B 50 V CGHV27030S-AMP5 1.2 - 1.4 GHz Class A/B 50 V Subject to change without notice. 1 www.cree.com/RF Rev 4.1 May 2017Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage V 125 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 4 mA 25C GMAX 1 Maximum Drain Current I 1.5 A 25C DMAX 2 Soldering Temperature T 245 C S 3 Case Operating Temperature T -40, +150 C C 4 Thermal Resistance, Junction to Case R 6.18 C/W 85C JC Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/rf/document-library 3 T = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal C resistance. See also, the Power Dissipation De-rating Curve on page 23. 4 Measured for the CGHV27030S at P = 12 W DISS 5 The R for Crees demonstration amplifier, CGHV27030S-AMP1, with 33 x 0.011 via holes designed on a 20 mil thick Rogers 4350 PCB, is 3.9C. The total TH R from the heat sink to the junction is 6.18C + 3.9C = 10.08C/W. TH Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 4 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 50 V, I = 0.13 mA GS(Q) DC DS D Saturated Drain Current I 3.0 3.6 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 150 V V = -8 V, I = 4 mA (BR)DSS DC GS D 2,3 RF Characteristics (T = 25C, F = 2.65 GHz unless otherwise noted) C 0 Gain G 19 21.3 - dB V = 50 V, I = 0.13 A, P = 10 dBm DD DQ IN 4 Output Power P 43 44 dBm V = 50 V, I = 0.13 A, P = 28 dBm OUT DD DQ IN 4 Drain Efficiency 48 60 - % V = 50 V, I = 0.13 A, P = 28 dBm DD DQ IN No damage at all phase angles, 4 Output Mismatch Stress VSWR - 10 : 1 - Y V = 50 V, I = 0.13 A, P = 28 dBm DD DQ IN Dynamic Characteristics 5 Input Capacitance C 5.38 pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs 5 Output Capacitance C 1.18 pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.12 pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in Crees production test fixture. This fixture is designed for high volume test at 2.65 GHz 4 Un-modulated Pulsed Signal 100 s, 10% duty cycle 5 Includes package parasitics. Cree, Inc. 4600 Silicon Drive Copyright 2013 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/rf 2 CGHV27030S Rev 4.1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Wolfspeed
Wolfspeed / Cree
Wolfspeed(CREE)

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted