V 900 V
DS
I @ 25C 11.5 A
D
E4D20120A
R 280 m
DS(on)
Silicon Carbide Schottky Diode
E-Series Automotive
Features Package
4th Generation SiC Merged PIN Schottky Technology
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
AEC-Q101 Qualified and PPAP Capable
Humidity Resistant
Benefits TO-220-2
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
PIN 1
Reduction of Heat Sink Requirements
CASE
Parallel Devices Without Thermal Runaway
PIN 2
Ideal for Outdoor Environments
Applications
Boost diodes in PFC or DC/DC stages
Part Number Package Marking
Free Wheeling Diodes in Inverter stages
AC/DC converters
E4D20120A TO-220-2 E4D20120
Automotive and Traction Power Conversion
PV Inverters
Maximum Ratings (T = 25 C unless otherwise specified)
C
Symbol Parameter Value Unit Test Conditions Note
V Repetitive Peak Reverse Voltage 1200 V
RRM
V DC Peak Reverse Voltage 1200 V
R
54.5 T =25C
C
I Continuous Forward Current 26 A T =135C Fig. 3
F C
20 T =150C
C
250 T =25C
C
P Power Dissipation W Fig. 4
tot
112.5 T =110C
C
91 T =25C, t =10 ms, Half Sine Pulse
C P
I Repetitive Peak Forward Surge Current A
FRM
61 T =110C, t =10 ms, Half Sine Pulse
C P
dV/dt Diode dV/dt ruggedness 250 V/ns V =0-960V
R
84.5 T =25C, t =10 ms
2 2 2 C P
i dt i t value A s
60.5 T =110C, t =10 ms
C P
-55 to
T , T Operating Junction and Storage Temperature C
J stg
+175
1 Nm M3 Screw
TO-220 Mounting Torque
8.8 lbf-in 6-32 Screw
1 E4D20120A Rev. -, 07-2018Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
1.5 1.8 I = 20 A T =25C
F J
V Forward Voltage V Fig. 1
F
2.2 I = 20 A T =175C
F J
35 200 V = 1200 V T =25C
R J
I Reverse Current A Fig. 2
R
65 V = 1200 V T =175C
R J
V = 800 V, I = 20A
R F
Q Total Capacitive Charge 99 nC di/dt = 200 A/s Fig. 5
C
T = 25C
J
1500 V = 0 V, T = 25C, f = 1 MHz
R J
C Total Capacitance 93 pF V = 400 V, T = 25C, f = 1 MHz Fig. 6
R J
67 V = 800 V, T = 25C, f = 1 MHz
R J
E Capacitance Stored Energy 28 J V = 800 V Fig. 7
C R
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
R Thermal Resistance from Junction to Case 0.6 C/W Fig. 9
JC
Typical Performance
40
1,000
T = -55 C
J
900
35
T = 25 C
J
800
T = 75 C
30 J
700
T = 125 C
J
25
T = 175 C
600
J
20
500
T = 175 C
J
400
1515
TT == 12125 5 CC
J
300
T = 75 C
J
10
T = 25 C
J
200
T = -55 C
5
J
100
0
0
0 12 34
0 500 1000 1500
Foward Voltage, V (V)
F Reverse Voltage, V (V)
V (V) V (V)
R
F R
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
2 E4D20120A Rev. -, 07-2018
FFoowwaarrdd CCuurrrreennt,t, II (A)
F
I (A)
F
RReevveerrssee LLeeaakkaaggee CCuurrrreenntt,, II (uA)
I (A)
RR
R