The XNF6N60T is an insulated gate bipolar transistor (IGBTs) Field Stop 600V 6A TO-220F RoHS manufactured by XINER. It has a maximum collector current of 6A, a maximum collector emitter voltage of 600V, and a maximum gate emitter voltage of +/- 20V. It has a maximum power dissipation of 40W, and is designed to be used in high speed switching application. It is also RoHS compliant and is available in a wide range of packages, including the TO-220F.