X-On Electronics has gained recognition as a prominent supplier of YJQ23GP06A MOSFET across the USA, India, Europe, Australia, and various other global locations. YJQ23GP06A MOSFET are a product manufactured by Yangjie. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

YJQ23GP06A Yangjie

YJQ23GP06A electronic component of Yangjie
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See Product Specifications
Part No.YJQ23GP06A
Manufacturer: Yangjie
Category: MOSFET
Description: DFN(3.3x3.3) MOSFETs ROHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.478 ea
Line Total: USD 2.39

Availability - 4777
Ships to you between
Fri. 28 Jun to Wed. 03 Jul
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2405 - WHS 1


Ships to you between
Fri. 28 Jun to Wed. 03 Jul

MOQ : 5
Multiples : 5
5 : USD 0.4024
50 : USD 0.3252
150 : USD 0.2921
500 : USD 0.2508
2500 : USD 0.2323
5000 : USD 0.2213

   
Manufacturer
Product Category
Package
Rohs
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We are delighted to provide the YJQ23GP06A from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the YJQ23GP06A and other electronic components in the MOSFET category and beyond.

The YJQ23GP06A is a DFN(3.3x3.3) MOSFET manufactured by Yangjie that is RoHS compliant. This product is a monolithic MOSFET with a logic level gate threshold featuring improved ESD protection of each pin up to 4 KaV. It also features a wide range of drain-source current (I D ) from -210A to +210A and a maximum sustained avalanche energy (E as ) of 40mJ. This device is ideal for use in high-density power management and DC-DC conversion applications. It is a compact and robust device capable of withstanding high temperatures up to 175°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
YANGJIE TECHNOLOGY
Yangzhou Yangjie
Yangzhou Yangjie Elec Tech

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